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IRFHM8363TRPBF

IRFHM8363TRPBF
Mfr. #:
IRFHM8363TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFHM8363TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFHM8363TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
2 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
16.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.8 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
15 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.7 W
Aufbau:
Dual
Verpackung:
Spule
Höhe:
1 mm
Länge:
3.3 mm
Transistortyp:
2 N-Channel
Breite:
3.3 mm
Marke:
Infineon / IR
Vorwärtstranskonduktanz - Min:
20 S
Abfallzeit:
33 ns
Produktart:
MOSFET
Anstiegszeit:
94 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
12 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
SP001565948
Gewichtseinheit:
0.001164 oz
Tags
IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R - Tape and Reel
***ineon SCT
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package, PQFN 3.3X3.3 8L, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET
***ark
N CH MOSFET, DUAL, 30V, 10A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0163ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.8V ;RoHS Compliant: Yes
***nell
MOSFET, DUAL, N-CH, 30V, 10A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
***trelec
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 14.9 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 94 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 19
*** Electronics
INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew
***ure Electronics
Single N-Channel 30 V 1.85 mOhm 77 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a PQFN 5X6mm package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, N-Channel, 30V, 100A, 1.85 mOhmmax, 37 nC Qg, PQFN 5x6
***Yang
Trans MOSFET N-CH 30V 35A 8-Pin QFN EP T/R - Tape and Reel
***nell
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00155ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 110W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load SyncFET
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***ure Electronics
Single N-Channel 30 V 2.1 mOhm 120 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
*** Source Electronics
MOSFET N-CH 30V 40A PQFN / Trans MOSFET N-CH 30V 40A 8-Pin PQFN EP T/R
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 250W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; ORing; Point of Load SyncFET
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
*** Source Electronics
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP T/R / MOSFET N CH 30V 21A PQFN5X6
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***ure Electronics
Single N-Channel 25 V 1.75 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
*** Source Electronics
Trans MOSFET N-CH 25V 45A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 45A PQFN
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0015ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: eFuse; HotSwap; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; MultiPhase SyncFET; ORing; Point of Load SyncFET
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***roFlash
Single N-Channel 30 V 2.95 mOhm 59 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ark
T&R / MOSFET, 30V, 25A, 4.9 mOhm, 4.7nC Qg, PQFN5x6
***Yang
Trans MOSFET N-CH 30V 27A 8-Pin PQFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 1.3C/W); Low Profile (less than 1.2 mm); Industry-Standard Pinout; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 82A, 4.2 MOHM MAX, 15 NC QG, LOW RG, PQFN 5X6
***et
Trans MOSFET N-CH 30V 23A 8-Pin QFN EP T/R
***ark
N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8
*** Electronic Components
RF Bipolar Transistors MOSFET 30V 1 N-CH HEXFET 4.2mOhms 15nC
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFHM8363TRPBF
DISTI # V72:2272_13890764		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 3000:$0.2839
  • 1000:$0.3297
  • 500:$0.3973
  • 250:$0.4017
  • 100:$0.4061
  • 25:$0.5674
  • 10:$0.5745
  • 1:$0.6622
IRFHM8363TRPBF
DISTI # IRFHM8363TRPBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 11A 8PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
  • 4000:$0.3850
IRFHM8363TRPBF
DISTI # 30331789		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 3000:$0.2839
  • 1000:$0.3297
  • 500:$0.3973
  • 250:$0.4017
  • 100:$0.4061
  • 26:$0.5674
IRFHM8363TRPBF
DISTI # 30327790		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R4000
  • 24000:$0.2954
  • 8000:$0.3135
  • 4000:$0.3145
IRFHM8363TRPBF
DISTI # IRFHM8363TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: IRFHM8363TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFHM8363TRPBF
    DISTI # IRFHM8363TRPBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R - Tape and Reel (Alt: IRFHM8363TRPBF)
    RoHS: Compliant
    Min Qty: 4000
    Container: Reel    		Americas - 0
    • 4000:$0.2879
    • 8000:$0.2769
    • 16000:$0.2669
    • 24000:$0.2579
    • 40000:$0.2539
    IRFHM8363TRPBF
    DISTI # SP001565948    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin QFN EP T/R (Alt: SP001565948)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.4219
    • 8000:€0.3449
    • 16000:€0.3159
    • 24000:€0.2919
    • 40000:€0.2709
    IRFHM8363TRPBF
    DISTI # 05W5523    		Infineon Technologies AGMOSFET Transistor, Dual N Channel, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V , RoHS Compliant: Yes966
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    IRFHM8363TRPBF
    DISTI # 942-IRFHM8363TRPBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 14.9mOhms 15nC
    RoHS: Compliant    		3630
    • 1:$0.8300
    • 10:$0.7000
    • 100:$0.5380
    • 500:$0.4760
    • 1000:$0.3750
    • 4000:$0.3330
    • 8000:$0.3210
    • 24000:$0.3100
    IRFH8363TRPBF
    DISTI # IRFHM8363TRPBF    		Infineon Technologies AGTransistor: N-MOSFET x2,unipolar,30V,11A,2.7W,PQFN3.3X3.32922
    • 1:$0.6700
    • 3:$0.5900
    • 10:$0.5300
    • 100:$0.4900
    IRFHM8363TRPBF
    DISTI # 2114658    		Infineon Technologies AGMOSFET, DUAL, N-CH, 30V, 10A, PQFN
    RoHS: Compliant    		1224
    • 1:$1.4200
    IRFHM8363TRPBF
    DISTI # 2114658    		Infineon Technologies AGMOSFET, DUAL, N-CH, 30V, 10A, PQFN
    RoHS: Compliant    		1611
    • 5:£0.7520
    • 25:£0.6480
    • 100:£0.4880
    • 250:£0.4610
    • 500:£0.4320
    IRFHM8363TRPBF
    DISTI # C1S322000576751    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 250:$0.4017
    • 100:$0.4061
    • 25:$0.5674
    • 10:$0.5745
    IRFHM8363TRPBF
    DISTI # C1S322000579776    		Infineon Technologies AGTrans MOSFET N-CH 30V 11A 8-Pin PQFN EP T/R
    RoHS: Compliant    		4000
    • 4000:$0.4590
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IRFHM8363TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,83 $
    0,83 $
    10
    0,70 $
    7,00 $
    100
    0,54 $
    53,80 $
    500
    0,48 $
    238,00 $
    1000
    0,38 $
    375,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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