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IRFHM8326TRPBF

IRFHM8326TRPBF
Mfr. #:
IRFHM8326TRPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFHM8326TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IRFHM8326TRPBF Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
19 A
Rds On - Drain-Source-Widerstand:
5.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.7 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.8 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.9 mm
Länge:
3.3 mm
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
70 S
Abfallzeit:
12 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
18 ns
Typische Einschaltverzögerungszeit:
12 ns
Teil # Aliase:
SP001570892
Tags
IRFHM83, IRFHM8, IRFHM, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 4.7 mOhm 39 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
***ical
Trans MOSFET N-CH 30V 19A 8-Pin PQFN EP T/R
***ineon
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.4C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Dual PQFN HEXFET® Power MOSFETs
Infineon Dual PQFN HEXFET® Power MOSFETs integrate two HEXFET® MOSFETs utilizing their latest silicon technology to deliver a high density, cost effective solution for low power applications including smart phones, tablet PCs, camcorders, digital still cameras, DC motors and wireless inductive chargers as well as notebook PC, server and Netcom equipment. These Dual PQFN HEXFET® Power MOSFETs come in either a PQFN2x2 or PQFN3.3x3.3 which offer the flexibility of either common drain or half-bridge topologies. Utilizing their latest low-voltage silicon technologies (N and P), Infineon Dual PQFN HEXFET® Power MOSFETs deliver ultra-low losses.Learn More
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IRFHM8326TRPBF
DISTI # 20816584		Infineon Technologies AGTrans MOSFET N-CH 30V 19A 8-Pin PQFN EP T/R1196
  • 302:$0.2075
IRFHM8326TRPBF
DISTI # IRFHM8326TRPBFCT-ND		Infineon Technologies AGMOSFET N-CH 30V 25A PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		129In Stock
  • 1000:$0.3024
  • 500:$0.3831
  • 100:$0.5123
  • 10:$0.6740
  • 1:$0.8000
IRFHM8326TRPBF
DISTI # IRFHM8326TRPBFDKR-ND		Infineon Technologies AGMOSFET N-CH 30V 25A PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		129In Stock
  • 1000:$0.3024
  • 500:$0.3831
  • 100:$0.5123
  • 10:$0.6740
  • 1:$0.8000
IRFHM8326TRPBF
DISTI # IRFHM8326TRPBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 25A PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 4000:$0.2700
IRFHM8326TRPBF
DISTI # IRFHM8326TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 19A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFHM8326TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.1639
  • 8000:$0.1579
  • 16000:$0.1519
  • 24000:$0.1469
  • 40000:$0.1439
IRFHM8326TRPBF
DISTI # IRFHM8326TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 19A 8-Pin PQFN T/R (Alt: IRFHM8326TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRFHM8326TRPBF
    DISTI # SP001570892    		Infineon Technologies AGTrans MOSFET N-CH 30V 19A 8-Pin PQFN T/R (Alt: SP001570892)
    RoHS: Compliant
    Min Qty: 4000
    Container: Tape and Reel    		Europe - 0
    • 4000:€0.2309
    • 8000:€0.1889
    • 16000:€0.1729
    • 24000:€0.1599
    • 40000:€0.1479
    IRFHM8326TRPBF
    DISTI # 45X9499    		Infineon Technologies AGMOSFET, N CHANNEL, 25V, 30A, PQFN-8,Transistor Polarity:N Channel,Continuous Drain Current Id:25A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0038ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes1196
    • 1:$0.1660
    • 25:$0.1660
    • 50:$0.1660
    • 100:$0.1660
    • 250:$0.1660
    • 500:$0.1660
    • 1000:$0.1660
    IRFHM8326TRPBF
    DISTI # 942-IRFHM8326TRPBF    		Infineon Technologies AGMOSFET 30V Fet 25A 4.7mOhm 20nC PQFN3 BTRY
    RoHS: Compliant    		2248
    • 1:$0.6300
    • 10:$0.5150
    • 100:$0.3140
    • 1000:$0.2430
    • 4000:$0.2070
    IRFHM8326TRPBF
    DISTI # 2577187    		Infineon Technologies AGMOSFET, N-CH, 30V, 19A, PQFN-8
    RoHS: Compliant    		0
    • 1:$0.9970
    • 10:$0.8150
    • 100:$0.4970
    • 1000:$0.3850
    • 4000:$0.3280
    IRFHM8326TRPBF.
    DISTI # 2424165    		Infineon Technologies AGMOSFET, N CHANNEL, 25V, 30A, PQFN-8
    RoHS: Compliant    		1196
    • 1:$0.9970
    • 10:$0.8150
    • 100:$0.4970
    • 1000:$0.3850
    • 4000:$0.3280
    IRFHM8326TRPBF
    DISTI # 2577187    		Infineon Technologies AGMOSFET, N-CH, 30V, 19A, PQFN-8
    RoHS: Compliant    		0
    • 5:£0.4410
    • 25:£0.4110
    • 100:£0.2380
    • 250:£0.2110
    • 500:£0.1840
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von IRFHM8326TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,62 $
    0,62 $
    10
    0,52 $
    5,15 $
    100
    0,31 $
    31,40 $
    1000
    0,24 $
    243,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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