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IRFHM831

IRFHM831TRPBF vs IRFHM831TR2PBF vs IRFHM831TRPB

 
PartNumberIRFHM831TRPBFIRFHM831TR2PBFIRFHM831TRPB
DescriptionMOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nCMOSFET N-CH 30V 14A PQFN
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CasePQFN-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance10.7 mOhms--
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge7.3 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.5 W--
ConfigurationSingle-Single Quad Drain Triple Source
PackagingReel-Reel
Height1.05 mm--
Length3.3 mm--
Transistor Type1 N-Channel-1 N-Channel
Width3.3 mm--
BrandInfineon / IR--
Forward Transconductance Min82 S--
Fall Time4.7 ns-4.7 ns
Product TypeMOSFET--
Rise Time12 ns-12 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time6.2 ns-6.2 ns
Typical Turn On Delay Time6.9 ns-6.9 ns
Part # AliasesSP001575868--
Unit Weight0.002328 oz--
Package Case--PQFN-8
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--14 A
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1.8 V
Rds On Drain Source Resistance--10.7 mOhms
Qg Gate Charge--7.3 nC
Forward Transconductance Min--82 S
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR 		IRFHM831TRPBF MOSFET 30V 1 N-CH HEXFET 7.8mOhms 7.3nC
Infineon Technologies
Infineon Technologies 		IRFHM831TR2PBF MOSFET N-CH 30V 14A PQFN
IRFHM831TRPBF MOSFET N-CH 30V 14A PQFN
IRFHM831TRPB Neu und Original
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