 | | |
| PartNumber | IRFHS8342TRPBF | IRFHS8342TR2PBF |
| Description | MOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC | MOSFET MOSFT 30V 8.5A 16mOhm 4.2 Qg |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-6 | PQFN-6 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 19 A | 8.8 A |
| Rds On Drain Source Resistance | 25 mOhms | 16 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.35 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 4.2 nC | 8.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.1 W | 2.1 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Reel | Reel |
| Height | 0.9 mm | 0.9 mm |
| Length | 2 mm | 2 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - |
| Width | 2 mm | 2 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Forward Transconductance Min | 18 S | 18 S |
| Fall Time | 5 ns | 5 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 15 ns | 15 ns |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 5.2 ns | 5.2 ns |
| Typical Turn On Delay Time | 5.9 ns | 5.9 ns |
| Part # Aliases | SP001556608 | SP001575842 |
| Unit Weight | - | 0.017637 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFHS8342TRPBF | MOSFET 30V 1 N-CH HEXFET 16mOhms 4.2nC | |
| IRFHS8342TR2PBF | MOSFET N-CH 30V 8.8A PQFN | ||
| IRFHS8342TRPBF | MOSFET N-CH 30V 8.8A PQFN | ||
Infineon / IR |
IRFHS8342TR2PBF | MOSFET MOSFT 30V 8.5A 16mOhm 4.2 Qg | |
| IRFHS8342TRPBF. | N CHANNEL MOSFET, 30V, 8.8A, 6-PQFN | ||
| IRFHS8342TRPBF-CUT TAPE | Neu und Original |