IRFR4105ZT

IRFR4105ZTRLPBF vs IRFR4105ZTR vs IRFR4105ZTRL

 
PartNumberIRFR4105ZTRLPBFIRFR4105ZTRIRFR4105ZTRL
DescriptionMOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nCMOSFET N-CH 55V 30A DPAKMOSFET N-CH 55V 30A DPAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance24.5 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation48 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min16 S--
Fall Time24 ns--
Product TypeMOSFET--
Rise Time40 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesSP001560656--
Unit Weight0.139332 oz--
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRFR4105ZTRPBF MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
IRFR4105ZTR MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRL MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRR MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRRPBF MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRLPBF MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRPBF MOSFET N-CH 55V 30A DPAK
Infineon / IR
Infineon / IR
IRFR4105ZTRLPBF MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC
IRFR4105ZTRPBF-CUT TAPE Neu und Original
IRFR4105ZTRPBF. Neu und Original
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