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| PartNumber | IRL6297SDTRPBF | IRL6297SDTRPBF-CUT TAPE | IRL6297SD |
| Description | MOSFET 20V Dual N-Channel HEXFET | ||
| Manufacturer | Infineon | - | Infineon Technologies |
| Product Category | MOSFET | - | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | - | Si |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Package / Case | DirectFET-SA | - | - |
| Number of Channels | 2 Channel | - | 2 Channel |
| Transistor Polarity | N-Channel | - | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 15 A | - | - |
| Rds On Drain Source Resistance | 3.8 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Qg Gate Charge | 54 nC | - | - |
| Minimum Operating Temperature | - 40 C | - | - 40 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 25 W | - | - |
| Configuration | Dual | - | Dual Common Drain |
| Packaging | Reel | - | Digi-ReelR Alternate Packaging |
| Height | 0.7 mm | - | - |
| Length | 4.85 mm | - | - |
| Transistor Type | 2 N-Channel | - | 2 N-Channel |
| Width | 3.95 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 60 S | - | - |
| Fall Time | 41 ns | - | 41 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 29 ns | - | 29 ns |
| Factory Pack Quantity | 4800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 41 ns | - | 41 ns |
| Typical Turn On Delay Time | 8.8 ns | - | 8.8 ns |
| Part # Aliases | SP001578724 | - | - |
| Unit Weight | 0.019224 oz | - | - |
| Series | - | - | HEXFETR |
| Package Case | - | - | DirectFET Isometric SA |
| Operating Temperature | - | - | -40°C ~ 150°C (TJ) |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | DIRECTFET SA |
| FET Type | - | - | 2 N-Channel (Dual) |
| Power Max | - | - | 1.7W |
| Drain to Source Voltage Vdss | - | - | 20V |
| Input Capacitance Ciss Vds | - | - | 2245pF @ 10V |
| FET Feature | - | - | Logic Level Gate |
| Current Continuous Drain Id 25°C | - | - | 15A |
| Rds On Max Id Vgs | - | - | 4.9 mOhm @ 15A, 4.5V |
| Vgs th Max Id | - | - | 1.1V @ 35μA |
| Gate Charge Qg Vgs | - | - | 54nC @ 10V |
| Pd Power Dissipation | - | - | 25 W |
| Vgs Gate Source Voltage | - | - | 12 V |
| Id Continuous Drain Current | - | - | 15 A |
| Vds Drain Source Breakdown Voltage | - | - | 20 V |
| Vgs th Gate Source Threshold Voltage | - | - | 0.8 V |
| Rds On Drain Source Resistance | - | - | 3.8 mOhms |
| Qg Gate Charge | - | - | 54 nC |
| Forward Transconductance Min | - | - | 60 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon Technologies |
IRL6297SDTRPBF | MOSFET 20V Dual N-Channel HEXFET | |
| IRL6297SDTRPBF | MOSFET 2N-CH 20V 15A DIRECTFET | ||
| IRL6297SDTRPBF-CUT TAPE | Neu und Original | ||
| IRL6297SD | Neu und Original |