IRL634

IRL6342TRPBF vs IRL6342PBF

 
PartNumberIRL6342TRPBFIRL6342PBF
DescriptionMOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpblMOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSO-8SO-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V30 V
Id Continuous Drain Current9.9 A9.9 A
Rds On Drain Source Resistance15 mOhms14.6 mOhms
Vgs th Gate Source Threshold Voltage1.1 V1.1 V
Vgs Gate Source Voltage12 V12 V
Qg Gate Charge11 nC11 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation2.5 W2.5 W
ConfigurationSingleSingle
PackagingReelTube
Height1.75 mm1.75 mm
Length4.9 mm4.9 mm
Transistor Type1 N-Channel1 N-Channel
Width3.9 mm3.9 mm
BrandInfineon TechnologiesInfineon / IR
Forward Transconductance Min38 S38 S
Fall Time14 ns14 ns
Product TypeMOSFETMOSFET
Rise Time12 ns12 ns
Factory Pack Quantity400095
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time33 ns33 ns
Typical Turn On Delay Time6 ns6 ns
Part # AliasesSP001572774SP001558090
Unit Weight0.017870 oz0.019048 oz
Channel Mode-Enhancement
Type-HEXFET Power MOSFET
Hersteller Teil # Beschreibung RFQ
Infineon Technologies
Infineon Technologies
IRL6342TRPBF MOSFET MOSFT 30V 9.9A 14.6mOhm 2.5V cpbl
IRL6342PBF MOSFET N-CH 30V 9.9A 8SOIC
IRL6342TRPBF MOSFET N-CH 30V 9.9A 8SOIC
Infineon / IR
Infineon / IR
IRL6342PBF MOSFET 30V 1 N-CH HEXFET 14.6mOhms 11nC
IRL6342TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:9.9A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1.1V, Power Di
IRL6342 Neu und Original
IRL6342TRPBF/IRL6342PBF Neu und Original
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