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| PartNumber | IRLH5030TRPBF | IRLH5030TRPBF-EL | IRLH5030TRPBF. |
| Description | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | Trans MOSFET N-CH 100V 13A 8-Pin PQFN T/R (Alt: IRLH5030TRPBF-EL) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PQFN-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 88 A | - | - |
| Rds On Drain Source Resistance | 9.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 16 V | - | - |
| Qg Gate Charge | 44 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.6 W | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 0.83 mm | - | - |
| Length | 6 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 160 S | - | - |
| Fall Time | 41 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 72 ns | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 41 ns | - | - |
| Typical Turn On Delay Time | 21 ns | - | - |
| Part # Aliases | SP001558752 | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Infineon / IR |
IRLH5030TRPBF | MOSFET 100V 1 N-CH HEXFET 9mOhms 44nC | |
Infineon Technologies |
IRLH5030TRPBF | MOSFET N-CH 100V 13A 8PQFN | |
| IRLH5030TRPBF-EL | Trans MOSFET N-CH 100V 13A 8-Pin PQFN T/R (Alt: IRLH5030TRPBF-EL) | ||
| IRLH5030TRPBF. | Neu und Original |