IRLU82

IRLU8203PBF vs IRLU8256PBF vs IRLU8259PBF

 
PartNumberIRLU8203PBFIRLU8256PBFIRLU8259PBF
DescriptionMOSFET 30V 1 N-CH HEXFET PWR MOSFET 6.8mOhmsMOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvlIGBT Transistors MOSFET MOSFT 57A 8.7mOhm 25V 6.8nC Qg log lvl
ManufacturerInfineonInfineonI
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage30 V25 V-
Id Continuous Drain Current110 A81 A-
Rds On Drain Source Resistance9 mOhms8.5 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge33 nC10 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation140 W63 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingTubeTubeTube
Height6.22 mm6.22 mm-
Length6.73 mm6.73 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeSmps MOSFET--
Width2.38 mm2.38 mm-
BrandInfineon / IRInfineon / IR-
Fall Time69 ns--
Product TypeMOSFETMOSFET-
Rise Time99 ns--
Factory Pack Quantity652575-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time30 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Part # Aliases-SP001568656-
Package Case--IPAK-3
Pd Power Dissipation--48 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--57 A
Vds Drain Source Breakdown Voltage--25 V
Rds On Drain Source Resistance--12.9 mOhms
Qg Gate Charge--6.8 nC
Hersteller Teil # Beschreibung RFQ
Infineon / IR
Infineon / IR
IRLU8203PBF MOSFET 30V 1 N-CH HEXFET PWR MOSFET 6.8mOhms
IRLU8256PBF MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
Infineon Technologies
Infineon Technologies
IRLU8203PBF MOSFET N-CH 30V 110A I-PAK
IRLU8259PBF IGBT Transistors MOSFET MOSFT 57A 8.7mOhm 25V 6.8nC Qg log lvl
IRLU8256PBF IGBT Transistors MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
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