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IRLU8256PBF

IRLU8256PBF
Mfr. #:
IRLU8256PBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRLU8256PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLU8256PBF DatasheetIRLU8256PBF Datasheet (P4-P6)IRLU8256PBF Datasheet (P7-P9)IRLU8256PBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-251-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
25 V
Id - Kontinuierlicher Drainstrom:
81 A
Rds On - Drain-Source-Widerstand:
8.5 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
10 nC
Pd - Verlustleistung:
63 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
6.22 mm
Länge:
6.73 mm
Transistortyp:
1 N-Channel
Breite:
2.38 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
75
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001568656
Gewichtseinheit:
0.139332 oz
Tags
IRLU82, IRLU8, IRLU, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET, 25V, 81A, 5.7 MOHM, 10 NC QG, LOGIC LEVEL, I-PAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 25V 81A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:25V; On Resistance Rds(on):5.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:63W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:81A; Package / Case:IPAK; Power Dissipation Pd:63W; Power Dissipation Pd:63W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Teil # Mfg. Beschreibung Aktie Preis
IRLU8256PBF
DISTI # IRLU8256PBF-ND		Infineon Technologies AGMOSFET N-CH 25V 81A IPAK
RoHS: Compliant
Min Qty: 1200
Container: Tube		Limited Supply - Call
    IRLU8256PBF
    DISTI # 70019898    		Infineon Technologies AGMOSFET,25V,81A,5.7 MOHM,10 NC QG,LOGIC LEVEL,I-PAK
    RoHS: Compliant    		0
    • 1200:$1.0700
    • 2400:$1.0490
    • 6000:$1.0170
    • 12000:$0.9740
    • 30000:$0.9100
    IRLU8256PBF
    DISTI # 942-IRLU8256PBF    		Infineon Technologies AGMOSFET MOSFT 81A 5.7mOhm 25V 10nC Qg log lvl
    RoHS: Compliant    		0
      IRLU8256PBFInternational Rectifier 
      RoHS: Compliant      		Europe - 4125
        IRLU8256PBF
        DISTI # 1698315        		Infineon Technologies AGMOSFET, N-CH 25V 81A IPAK
        RoHS: Compliant        		0
        • 1:$1.6700
        • 10:$0.8480
        • 100:$0.7130
        • 500:$0.6740
        • 1000:$0.6590
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        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        5000
        Menge eingeben:
        Der aktuelle Preis von IRLU8256PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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