 |  | | |
| PartNumber | IRLW630ATM | IRLW610A | IRLW630ATM F630NS |
| Description | MOSFET 200V N-Channel a-FET Logic Level | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 9 A | - | - |
| Rds On Drain Source Resistance | 400 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 9.65 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 4.5 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 30 ns | - | - |
| Typical Turn On Delay Time | 8 ns | - | - |
| Unit Weight | 0.011640 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
IRLW630ATM | MOSFET 200V N-Channel a-FET Logic Level | |
| IRLW610A | Neu und Original | ||
| IRLW630ATM F630NS | Neu und Original | ||
| IRLW630ATRRPBF | Neu und Original | ||
| IRLW640A | Neu und Original | ||
| IRLW620ATM | Neu und Original | ||
| IRLW630A | Neu und Original | ||
ON Semiconductor |
IRLW630ATM | MOSFET N-CH 200V 9A I2PAK | |
| IRLW610ATM | MOSFET N-CH 200V 3.3A I2PAK |