 | | |
| PartNumber | ISL9N302AS3ST | ISL9N302AS3 |
| Description | MOSFET N-Ch LL UltraFET PWM Optimized | MOSFET N-Ch LL UltraFET PWM Optimized |
| Manufacturer | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | E | E |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 75 A | 75 A |
| Rds On Drain Source Resistance | 1.9 mOhms | 1.9 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 345 W | 345 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Tube |
| Height | 4.83 mm | 4.83 mm |
| Length | 10.67 mm | 10.67 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | MOSFET |
| Width | 9.65 mm | 9.65 mm |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Fall Time | 34 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 120 ns | - |
| Factory Pack Quantity | 800 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 45 ns | - |
| Typical Turn On Delay Time | 29 ns | - |
| Part # Aliases | ISL9N302AS3ST_NL | - |
| Unit Weight | 0.050717 oz | 0.050717 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
ISL9N302AS3ST | MOSFET N-Ch LL UltraFET PWM Optimized | |
| ISL9N302AS3 | MOSFET N-Ch LL UltraFET PWM Optimized | ||
ON Semiconductor |
ISL9N302AS3 | MOSFET N-CH 30V 75A TO-262AA | |
| ISL9N302AS3ST | MOSFET N-CH 30V 75A D2PAK | ||
| ISL9N302AS35T | Neu und Original | ||
| ISL9N302AS3S | Neu und Original | ||
| ISL9N302AS3ST-NL | Neu und Original |