IXDH2

IXDH20N120 vs IXDH20N120D1 vs IXDH20N120D

 
PartNumberIXDH20N120IXDH20N120D1IXDH20N120D
DescriptionIGBT Transistors 20 Amps 1200VIGBT Transistors 20 Amps 1200V
ManufacturerIXYSIXYS-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3TO-247-3-
Mounting StyleThrough HoleThrough Hole-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V1.2 kV-
Collector Emitter Saturation Voltage2.4 V2.4 V-
Maximum Gate Emitter Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesIXDH20N120IXDH20N120-
PackagingTubeTube-
Continuous Collector Current Ic Max38 A50 A-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Continuous Collector Current38 A38 A-
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity3030-
SubcategoryIGBTsIGBTs-
Unit Weight0.229281 oz0.229281 oz-
Continuous Collector Current at 25 C-38 A-
Pd Power Dissipation-200 W-
Operating Temperature Range-- 55 C to + 150 C-
Gate Emitter Leakage Current-500 nA-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXDH20N120 IGBT Transistors 20 Amps 1200V
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
IXDH20N120D Neu und Original
IXDH20N120DI Neu und Original
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
IXDH20N120 IGBT Transistors 20 Amps 1200V
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