IXDH20N120

IXDH20N120 vs IXDH20N120D1

 
PartNumberIXDH20N120IXDH20N120D1
DescriptionIGBT Transistors 20 Amps 1200VIGBT Transistors 20 Amps 1200V
ManufacturerIXYSIXYS
Product CategoryIGBT TransistorsIGBT Transistors
RoHSYY
TechnologySiSi
Package / CaseTO-247-3TO-247-3
Mounting StyleThrough HoleThrough Hole
ConfigurationSingleSingle
Collector Emitter Voltage VCEO Max1200 V1.2 kV
Collector Emitter Saturation Voltage2.4 V2.4 V
Maximum Gate Emitter Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
SeriesIXDH20N120IXDH20N120
PackagingTubeTube
Continuous Collector Current Ic Max38 A50 A
Height21.46 mm21.46 mm
Length16.26 mm16.26 mm
Width5.3 mm5.3 mm
BrandIXYSIXYS
Continuous Collector Current38 A38 A
Product TypeIGBT TransistorsIGBT Transistors
Factory Pack Quantity3030
SubcategoryIGBTsIGBTs
Unit Weight0.229281 oz0.229281 oz
Continuous Collector Current at 25 C-38 A
Pd Power Dissipation-200 W
Operating Temperature Range-- 55 C to + 150 C
Gate Emitter Leakage Current-500 nA
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXDH20N120 IGBT Transistors 20 Amps 1200V
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
IXDH20N120D1 IGBT Transistors 20 Amps 1200V
IXDH20N120 IGBT Transistors 20 Amps 1200V
IXDH20N120D Neu und Original
IXDH20N120DI Neu und Original
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