IXFB3

IXFB30N120P vs IXFB300N10P vs IXFB30N120Q2

 
PartNumberIXFB30N120PIXFB300N10PIXFB30N120Q2
DescriptionMOSFET 30 Amps 1200V 0.35 RdsMOSFET POLAR PWR MOSFET 100V, 300AMOSFET N-CH 1200V 30A PLUS264
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CasePLUS-264-3PLUS-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.2 kV100 V-
Id Continuous Drain Current30 A300 A-
Rds On Drain Source Resistance350 mOhms5.5 mOhms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge310 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 kW--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height26.59 mm--
Length20.29 mm--
SeriesIXFB30N120PIXFB300N10-
Transistor Type1 N-Channel1 N-Channel-
TypePolar HiPerFET Power MOSFET--
Width5.31 mm--
BrandIXYSIXYS-
Forward Transconductance Min13 S--
Fall Time56 ns--
Product TypeMOSFETMOSFET-
Rise Time60 ns--
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time95 ns--
Typical Turn On Delay Time57 ns--
Unit Weight0.056438 oz0.373904 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFB30N120P MOSFET 30 Amps 1200V 0.35 Rds
IXFB38N100Q2 MOSFET 38 Amps 1000V 0.25 Rds
IXFB300N10P MOSFET POLAR PWR MOSFET 100V, 300A
IXFB38N100Q Neu und Original
IXFB30N120Q2 MOSFET N-CH 1200V 30A PLUS264
IXFB30N120P IGBT Transistors MOSFET 30 Amps 1200V 0.35 Rds
IXFB300N10P MOSFET POLAR PWR MOSFET 100V, 300A
IXFB38N100Q2 MOSFET 38 Amps 1000V 0.25 Rds
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