IXFH12N12

IXFH12N120P vs IXFH12N120 vs IXFH12N120D

 
PartNumberIXFH12N120PIXFH12N120IXFH12N120D
DescriptionMOSFET 12 Amps 1200V 1.15 RdsMOSFET 12 Amps 1200V 1.3 Rds
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage1.2 kV1.2 kV-
Id Continuous Drain Current12 A12 A-
Rds On Drain Source Resistance1.35 Ohms1.4 Ohms-
Vgs th Gate Source Threshold Voltage6.5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge103 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation543 W500 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameHiPerFETHyperFET-
PackagingTubeTube-
Height21.46 mm21.46 mm-
Length16.26 mm16.26 mm-
SeriesIXFH12N120IXFH12N120-
Transistor Type1 N-Channel1 N-Channel-
TypePolar Power MOSFET HiPerFET--
Width5.3 mm5.3 mm-
BrandIXYSIXYS-
Forward Transconductance Min5 S--
Fall Time34 ns17 ns-
Product TypeMOSFETMOSFET-
Rise Time25 ns25 ns-
Factory Pack Quantity3030-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time62 ns35 ns-
Typical Turn On Delay Time34 ns24 ns-
Unit Weight0.229281 oz0.229281 oz-
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFH12N120P MOSFET 12 Amps 1200V 1.15 Rds
IXFH12N120 MOSFET 12 Amps 1200V 1.3 Rds
IXFH12N120D Neu und Original
IXFH12N120P MOSFET N-CH 1200V 12A TO-247
IXFH12N120 MOSFET 12 Amps 1200V 1.3 Rds
Top