IXFH58 stock, IXFH58, IXFH58N20


PartNumber	IXFH58N20	IXFH58N20 +	IXFH58N20Q
Description	MOSFET 200V 58A		MOSFET 200V 58A
Manufacturer	IXYS	-	IXYS
Product Category	MOSFET	-	IC Chips
RoHS	Y	-	-
Technology	Si	-	Si
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-247-3	-	-
Number of Channels	1 Channel	-	1 Channel
Transistor Polarity	N-Channel	-	N-Channel
Vds Drain Source Breakdown Voltage	200 V	-	-
Id Continuous Drain Current	58 A	-	-
Rds On Drain Source Resistance	40 mOhms	-	-
Vgs Gate Source Voltage	20 V	-	-
Minimum Operating Temperature	- 55 C	-	- 55 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Pd Power Dissipation	300 W	-	-
Configuration	Single	-	Single
Channel Mode	Enhancement	-	Enhancement
Tradename	HyperFET	-	HyperFET
Packaging	Tube	-	Tube
Height	21.46 mm	-	-
Length	16.26 mm	-	-
Series	IXFH58N20	-	IXFH58N20
Transistor Type	1 N-Channel	-	1 N-Channel
Width	5.3 mm	-	-
Brand	IXYS	-	-
Forward Transconductance Min	32 S	-	-
Fall Time	16 ns	-	13 ns
Product Type	MOSFET	-	-
Rise Time	15 ns	-	40 ns
Factory Pack Quantity	30	-	-
Subcategory	MOSFETs	-	-
Typical Turn Off Delay Time	72 ns	-	40 ns
Typical Turn On Delay Time	18 ns	-	20 ns
Unit Weight	0.229281 oz	-	6500 g
Package Case	-	-	TO-247-3
Pd Power Dissipation	-	-	300 W
Vgs Gate Source Voltage	-	-	20 V
Id Continuous Drain Current	-	-	58 A
Vds Drain Source Breakdown Voltage	-	-	200 V
Rds On Drain Source Resistance	-	-	40 mOhms
Forward Transconductance Min	-	-	34 S