 | | | |
| PartNumber | IXFH6N100F | IXFH6N100Q | IXFH6N100 |
| Description | MOSFET HiPerRF Power Mosfet 1000V 6A | MOSFET 6 Amps 1000V 2 Rds | MOSFET 1KV 6A |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | 1 kV |
| Id Continuous Drain Current | 6 A | 6 A | 6 A |
| Rds On Drain Source Resistance | 1.9 Ohms | 1.9 Ohms | 2 Ohms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 180 W | 180 W | 180 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Height | 21.46 mm | 21.46 mm | 21.46 mm |
| Length | 16.26 mm | 16.26 mm | 16.26 mm |
| Series | IXFH6N100 | IXFH6N100 | IXFH6N100 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.3 mm | 5.3 mm | 5.3 mm |
| Brand | IXYS | IXYS | IXYS |
| Fall Time | 8.3 ns | 12 ns | 60 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 8.6 ns | 15 ns | 40 ns |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 31 ns | 22 ns | 100 ns |
| Typical Turn On Delay Time | 11 ns | 10 ns | 35 ns |
| Unit Weight | 0.229281 oz | 0.229281 oz | 0.229281 oz |
| Tradename | - | HyperFET | HyperFET |
| Packaging | - | Tube | Tube |
| Forward Transconductance Min | - | - | 6 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXFH6N120P | MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A | |
| IXFH6N100F | MOSFET HiPerRF Power Mosfet 1000V 6A | ||
| IXFH6N100Q | MOSFET 6 Amps 1000V 2 Rds | ||
| IXFH6N120 | MOSFET 6 Amps 1200V 2.4 Rds | ||
| IXFH6N100 | MOSFET 1KV 6A | ||
| IXFH6N100-ND | Neu und Original | ||
| IXFH6N100F | MOSFET N-CH 1000V 6A TO247 | ||
| IXFH6N120P | Darlington Transistors MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A | ||
| IXFH6N100Q | MOSFET 6 Amps 1000V 2 Rds | ||
| IXFH6N100 | IGBT Transistors MOSFET 1KV 6A | ||
| IXFH6N120 | MOSFET 6 Amps 1200V 2.4 Rds |