IXFH80N1

IXFH80N10 vs IXFH80N100 vs IXFH80N10Q

 
PartNumberIXFH80N10IXFH80N100IXFH80N10Q
DescriptionMOSFET 80 Amps 100V 0.125 RdsMOSFET 100V 80A
ManufacturerIXYS-IXYS
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-247-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance12.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation300 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET-HyperFET
PackagingTube-Tube
Height21.46 mm--
Length16.26 mm--
SeriesIXFH80N10-IXFH80N10
Transistor Type1 N-Channel-1 N-Channel
Width5.3 mm--
BrandIXYS--
Fall Time26 ns-30 ns
Product TypeMOSFET--
Rise Time63 ns-70 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time90 ns-68 ns
Typical Turn On Delay Time41 ns-30 ns
Unit Weight0.229281 oz-0.229281 oz
Package Case--TO-247-3
Pd Power Dissipation--360 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--80 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--15 mOhms
Forward Transconductance Min--45 S
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFH80N10 MOSFET 80 Amps 100V 0.125 Rds
IXFH80N100 Neu und Original
IXFH80N15Q MOSFET 80 Amps 150V 0.0225 Rds
IXFH80N10 MOSFET 80 Amps 100V 0.125 Rds
IXFH80N10Q MOSFET 100V 80A
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