OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IXFK30N

IXFK30N100Q2 vs IXFK30N110P vs IXFK30N50Q

 
PartNumberIXFK30N100Q2IXFK30N110PIXFK30N50Q
DescriptionMOSFET 30 Amps 1000V 0.35 RdsMOSFET N-CH 1100V 30A TO-264MOSFET 30 Amps 500V 0.16 Rds
ManufacturerIXYS-IXYS
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-264-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage1 kV--
Id Continuous Drain Current30 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation735 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameHyperFET--
PackagingTube-Tube
Height26.16 mm--
Length19.96 mm--
SeriesIXFK30N100-IXFK30N50
Transistor Type1 N-Channel-1 N-Channel
Width5.13 mm--
BrandIXYS--
Fall Time10 ns-20 ns
Product TypeMOSFET--
Rise Time14 ns-42 ns
Factory Pack Quantity25--
SubcategoryMOSFETs--
Typical Turn Off Delay Time60 ns-75 ns
Typical Turn On Delay Time22 ns-35 ns
Unit Weight0.352740 oz-0.352740 oz
Package Case--TO-264-3
Pd Power Dissipation--416 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--30 A
Vds Drain Source Breakdown Voltage--500 V
Rds On Drain Source Resistance--160 mOhms
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse 		IXFK30N100Q2 MOSFET 30 Amps 1000V 0.35 Rds
IXFK30N110P MOSFET N-CH 1100V 30A TO-264
IXFK30N100Q2 MOSFET N-CH 1000V 30A TO-264
IXFK30N50Q MOSFET 30 Amps 500V 0.16 Rds
Top