| PartNumber | IXFK32N100X | IXFK32N100P | IXFK320N17T2 |
| Description | MOSFET 1000V 32A TO-264 Power MOSFET | MOSFET 32 Amps 1000V 0.32 Rds | MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET |
| Manufacturer | IXYS | IXYS | IXYS |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-264-3 | TO-264-3 | TO-264 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1000 V | 1 kV | - |
| Id Continuous Drain Current | 32 A | 32 A | - |
| Rds On Drain Source Resistance | 220 mOhms | 320 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 6.5 V | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Qg Gate Charge | 130 nC | 225 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
| Pd Power Dissipation | 890 W | 960 W | 1670 W |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | HiPerFET | HiPerFET | HiPerFET |
| Packaging | Tube | Tube | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | IXYS |
| Forward Transconductance Min | 14 S | 13 S | - |
| Fall Time | 12 ns | 43 ns | 230 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12 ns | 55 ns | 170 ns |
| Factory Pack Quantity | 25 | 25 | 25 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 80 ns | 76 ns | - |
| Typical Turn On Delay Time | 29 ns | 50 ns | - |
| Height | - | 26.16 mm | - |
| Length | - | 19.96 mm | - |
| Series | - | IXFK32N100 | IXFK320N17 |
| Type | - | Polar Power MOSFET HiPerFET | - |
| Width | - | 5.13 mm | - |
| Unit Weight | - | 0.352740 oz | 0.352740 oz |
| Product | - | - | MOSFET Gate Drivers |