IXFK32N80Q3

IXFK32N80Q3
Mfr. #:
IXFK32N80Q3
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFK32N80Q3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Mehr Informationen:
IXFK32N80Q3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
IXFK32N80
Verpackung
Rohr
Gewichtseinheit
0.264555 oz
Montageart
Durchgangsloch
Handelsname
HyperFET
Paket-Koffer
TO-264-3
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
1 kW
Maximale-Betriebstemperatur
+ 150 C
Anstiegszeit
300 ns
Vgs-Gate-Source-Spannung
30 V
ID-Dauer-Drain-Strom
32 A
Vds-Drain-Source-Breakdown-Voltage
800 V
Rds-On-Drain-Source-Widerstand
270 mOhms
Transistor-Polarität
N-Kanal
Qg-Gate-Ladung
140 nC
Tags
IXFK32N, IXFK32, IXFK3, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
HiPerFET Power MOSFETs - EXPANSION
IXYS has expanded the HiPerFET MOSTET family by introducing the Q3-Class products. The new Q3-Class provide up to a 25 percent reduction in on-state resistance, 27 percent reduction in input capacitance, 28 percent reduction in gate chare, 41 percent increase in maximum power dissipation, and up to 50 percent reduction in thermal resistances.Learn more.These high-current, Polar HT™/HV™ HiPerFET™ power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These HiPerFET MOSFETs are available in standard industrial packages, including isolated types.View all HiPerFET MOSFETs.
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Teil # Mfg. Beschreibung Aktie Preis
IXFK32N80Q3
DISTI # IXFK32N80Q3-ND
IXYS CorporationMOSFET N-CH 800V 32A TO-264
RoHS: Compliant
Min Qty: 1
Container: Tube
50In Stock
  • 100:$16.3200
  • 25:$17.7600
  • 1:$21.1200
IXFK32N80Q3
DISTI # 747-IXFK32N80Q3
IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A
RoHS: Compliant
0
  • 1:$24.2900
  • 10:$22.0800
  • 25:$20.4200
  • 50:$18.7900
  • 100:$18.3300
  • 250:$16.8000
  • 500:$15.2500
Bild Teil # Beschreibung
IXFK32N80P

Mfr.#: IXFK32N80P

OMO.#: OMO-IXFK32N80P

MOSFET 32 Amps 800V 0.27 Rds
IXFK36N60P

Mfr.#: IXFK36N60P

OMO.#: OMO-IXFK36N60P

MOSFET 600V 36A
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P

MOSFET 32 Amps 1000V 0.32 Rds
IXFK360N15T2

Mfr.#: IXFK360N15T2

OMO.#: OMO-IXFK360N15T2-IXYS-CORPORATION

Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET
IXFK300N20X3

Mfr.#: IXFK300N20X3

OMO.#: OMO-IXFK300N20X3-IXYS-CORPORATION

200V/300A ULTRA JUNCTION X3-CLAS
IXFK32N100P

Mfr.#: IXFK32N100P

OMO.#: OMO-IXFK32N100P-IXYS-CORPORATION

Darlington Transistors MOSFET 32 Amps 1000V 0.32 Rds
IXFK32N80P

Mfr.#: IXFK32N80P

OMO.#: OMO-IXFK32N80P-IXYS-CORPORATION

Darlington Transistors MOSFET 32 Amps 800V 0.27 Rds
IXFK30N100Q2

Mfr.#: IXFK30N100Q2

OMO.#: OMO-IXFK30N100Q2-IXYS-CORPORATION

MOSFET N-CH 1000V 30A TO-264
IXFK36N60P

Mfr.#: IXFK36N60P

OMO.#: OMO-IXFK36N60P-IXYS-CORPORATION

IGBT Transistors MOSFET 600V 36A
IXFK36N60

Mfr.#: IXFK36N60

OMO.#: OMO-IXFK36N60-IXYS-CORPORATION

MOSFET 600V 36A
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2500
Menge eingeben:
Der aktuelle Preis von IXFK32N80Q3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
22,88 $
22,88 $
10
21,73 $
217,31 $
100
20,59 $
2 058,75 $
500
19,44 $
9 721,90 $
1000
18,30 $
18 300,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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