PartNumber | IXFN25N90 | IXFN250N06 | IXFN25N50 |
Description | MOSFET 25 Amps 900V 0.33 Rds | ||
Manufacturer | IXYS | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Chassis Mount | - | - |
Package / Case | SOT-227-4 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 900 V | - | - |
Id Continuous Drain Current | 25 A | - | - |
Rds On Drain Source Resistance | 330 mOhms | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 600 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | HyperFET | - | - |
Packaging | Tube | - | - |
Height | 9.6 mm | - | - |
Length | 38.2 mm | - | - |
Series | IXFN25N90 | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 25.07 mm | - | - |
Brand | IXYS | - | - |
Fall Time | 24 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 35 ns | - | - |
Factory Pack Quantity | 10 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 130 ns | - | - |
Typical Turn On Delay Time | 60 ns | - | - |
Unit Weight | 1.058219 oz | - | - |