 |  |  | |
| PartNumber | IXFN36N100 | IXFN36N50 | IXFN36N110P |
| Description | MOSFET 1KV 36A | MOSFET N-CH 1100V 36A SOT-227B | |
| Manufacturer | IXYS | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Chassis Mount | - | - |
| Package / Case | SOT-227-4 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 1 kV | - | - |
| Id Continuous Drain Current | 36 A | - | - |
| Rds On Drain Source Resistance | 240 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 700 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | HyperFET | - | - |
| Packaging | Tube | - | - |
| Height | 9.6 mm | - | - |
| Length | 38.23 mm | - | - |
| Series | IXFN36N100 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 25.42 mm | - | - |
| Brand | IXYS | - | - |
| Forward Transconductance Min | 40 S | - | - |
| Fall Time | 30 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 110 ns | - | - |
| Typical Turn On Delay Time | 41 ns | - | - |
| Unit Weight | 1.058219 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXFN36N100 | MOSFET 1KV 36A | |
| IXFN36N60 | MOSFET 600V 36A | ||
| IXFN36N50 | Neu und Original | ||
| IXFN36N110P | MOSFET N-CH 1100V 36A SOT-227B | ||
| IXFN36N60 | MOSFET 600V 36A | ||
| IXFN36N100 | IGBT Transistors MOSFET 1KV 36A |