 |  |  | |
| PartNumber | IXFP5N100P | IXFP5N100PM | IXFP5N100P ROHS |
| Description | MOSFET 5 Amps 1000V | MOSFET DISCMOSFETN-CH HIPERFET-POLA | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220-3 | TO-220FP-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 1 kV | 1 kV | - |
| Id Continuous Drain Current | 5 A | 2.3 A | - |
| Rds On Drain Source Resistance | 2.8 Ohms | 2.8 Ohms | - |
| Vgs Gate Source Voltage | 30 V | 30 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 250 W | 42 W | - |
| Configuration | Single | Single | - |
| Tradename | HiPerFET | HiPerFET | - |
| Packaging | Tube | - | - |
| Series | IXFP5N100 | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.081130 oz | - | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Qg Gate Charge | - | 33.4 nC | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 37 ns | - |
| Rise Time | - | 13 ns | - |
| Typical Turn Off Delay Time | - | 30 ns | - |
| Typical Turn On Delay Time | - | 12 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXFP5N100P | MOSFET 5 Amps 1000V | |
| IXFP5N50P3 | MOSFET Polar3 HiPerFET Power MOSFETs | ||
| IXFP5N100PM | MOSFET DISCMOSFETN-CH HIPERFET-POLA | ||
| IXFP5N100P ROHS | Neu und Original | ||
| IXFP5N100PM | MOSFET N-CH 1000V 2.3A TO-220 | ||
| IXFP5N100P | Darlington Transistors MOSFET 5 Amps 1000V | ||
| IXFP5N50P3 | IGBT Transistors MOSFET Polar3 HiPerFET Power MOSFETs | ||
| IXFP5N50PM | MOSFET 3.2 Amps 500V 1.4 Ohms Rds |