IXFR20

IXFR200N10P vs IXFR20N100P vs IXFR20N120P

 
PartNumberIXFR200N10PIXFR20N100PIXFR20N120P
DescriptionMOSFET 133 Amps 100V 0.0075 RdsMOSFET 20 Amps 1000V 1 RdsMOSFET 26 Amps 1200V 1 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V1 kV1.2 kV
Id Continuous Drain Current133 A11 A13 A
Rds On Drain Source Resistance9 mOhms640 mOhms630 mOhms
Vgs th Gate Source Threshold Voltage5 V6.5 V-
Vgs Gate Source Voltage20 V30 V30 V
Qg Gate Charge235 nC126 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation300 W230 W290 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFETHiPerFETHiPerFET
PackagingTubeTubeTube
Height21.34 mm21.34 mm21.34 mm
Length16.13 mm16.13 mm16.13 mm
SeriesIXFR200N10IXFR20N100IXFR20N120
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolar HiPerFET Power MOSFETPolar Power MOSFET HiPerFET-
Width5.21 mm5.21 mm5.21 mm
BrandIXYSIXYSIXYS
Forward Transconductance Min60 S8 S-
Fall Time90 ns45 ns70 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time35 ns37 ns45 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time150 ns56 ns72 ns
Typical Turn On Delay Time30 ns40 ns49 ns
Unit Weight0.056438 oz0.056438 oz0.056438 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXFR200N10P MOSFET 133 Amps 100V 0.0075 Rds
IXFR20N100P MOSFET 20 Amps 1000V 1 Rds
IXFR20N120P MOSFET 26 Amps 1200V 1 Rds
IXFR20N80P MOSFET 10 Amps 800V 0.5 Rds
IXFR200N10 Neu und Original
IXFR20N80Q MOSFET N-CH ISOPLUS247
IXFR200N10P Darlington Transistors MOSFET 133 Amps 100V 0.0075 Rds
IXFR20N100P Darlington Transistors MOSFET 20 Amps 1000V 1 Rds
IXFR20N120P MOSFET 26 Amps 1200V 1 Rds
IXFR20N80P MOSFET 10 Amps 800V 0.5 Rds
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