PartNumber | IXTH12N100L | IXTH12N150 | IXTH12N100 |
Description | MOSFET 12 Amps 1000V 1.3 Ohms Rds | MOSFET >1200V High Voltage Power MOSFET | MOSFET 12 Amps 1000V 1.05 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 1 kV | 1.5 kV | 1 kV |
Id Continuous Drain Current | 12 A | 12 A | 12 A |
Rds On Drain Source Resistance | 1.3 Ohms | 2 Ohms | 1.05 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 400 W | 890 W | 300 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Tube | Tube |
Height | 21.46 mm | 21.46 mm | 21.46 mm |
Length | 16.26 mm | 16.26 mm | 16.26 mm |
Series | IXTH12N100 | IXTH12N150 | IXTH12N100 |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Width | 5.3 mm | 5.3 mm | 5.3 mm |
Brand | IXYS | IXYS | IXYS |
Fall Time | 65 ns | 14 ns | 32 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 55 ns | 16 ns | 33 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 110 ns | 53 ns | 62 ns |
Typical Turn On Delay Time | 30 ns | 26 ns | 21 ns |
Unit Weight | 0.229281 oz | 0.056438 oz | 0.229281 oz |
Vgs th Gate Source Threshold Voltage | - | 4.5 V | - |
Qg Gate Charge | - | 106 nC | - |
Type | - | High Voltage Power MOSFET | - |
Forward Transconductance Min | - | 8 S | - |