PartNumber | IXTH200N10T | IXTH20N50D | IXTH20N60 |
Description | MOSFET 200 Amps 100V 5.4 Rds | MOSFET 20 Amps 500V 0.33 Rds | MOSFET 20 Amps 600V 0.35 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 500 V | 600 V |
Id Continuous Drain Current | 200 A | 20 A | 20 A |
Rds On Drain Source Resistance | 5.5 mOhms | 330 mOhms | 350 mOhms |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 550 W | 400 W | 300 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Depletion | Enhancement |
Tradename | HiPerFET | - | - |
Packaging | Tube | Tube | Tube |
Height | 21.46 mm | 21.46 mm | 21.46 mm |
Length | 16.26 mm | 16.26 mm | 16.26 mm |
Series | IXTH200N10 | IXTH20N50 | IXTH20N60 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.3 mm | 5.3 mm | 5.3 mm |
Brand | IXYS | IXYS | IXYS |
Fall Time | 34 ns | 75 ns | 40 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 31 ns | 85 ns | 43 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 45 ns | 110 ns | 70 ns |
Typical Turn On Delay Time | 35 ns | 35 ns | 20 ns |
Unit Weight | 0.229281 oz | 0.194007 oz | 0.229281 oz |
Vgs Gate Source Voltage | - | 30 V | 20 V |
Forward Transconductance Min | - | - | 18 S |