 | |  | |
| PartNumber | IXTH50N25T | IXTH50N20 | IXTH50N20A |
| Description | MOSFET Trench Gate Power MOSFET | MOSFET 50 Amps 200V 0.045 Rds | |
| Manufacturer | IXYS | IXYS | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 250 V | 200 V | - |
| Id Continuous Drain Current | 50 A | 50 A | - |
| Rds On Drain Source Resistance | 60 mOhms | 45 mOhms | - |
| Configuration | Single | Single | - |
| Tradename | HiPerFET | - | - |
| Packaging | Tube | Tube | - |
| Series | IXTH50N25 | IXTH50N20 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | IXYS | IXYS | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 1 | 30 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.056438 oz | 0.229281 oz | - |
| RoHS | - | Y | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 300 W | - |
| Channel Mode | - | Enhancement | - |
| Height | - | 21.46 mm | - |
| Length | - | 16.26 mm | - |
| Width | - | 5.3 mm | - |
| Forward Transconductance Min | - | 32 S | - |
| Fall Time | - | 16 ns | - |
| Rise Time | - | 15 ns | - |
| Typical Turn Off Delay Time | - | 72 ns | - |
| Typical Turn On Delay Time | - | 18 ns | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Littelfuse |
IXTH50N25T | MOSFET Trench Gate Power MOSFET | |
| IXTH50N20 | MOSFET 50 Amps 200V 0.045 Rds | ||
| IXTH50N20A | Neu und Original | ||
| IXTH50N20 | MOSFET 50 Amps 200V 0.045 Rds | ||
| IXTH50N25T | MOSFET Trench Gate Power MOSFET |