IXTP2N

IXTP2N65X2 vs IXTP2N100P vs IXTP2N100

 
PartNumberIXTP2N65X2IXTP2N100PIXTP2N100
DescriptionMOSFET DISCMSFT NCHULTRAJNCTX2CLASSMOSFET 2 Amps 1000V 7.5 RdsMOSFET 2 Amps 1000V 7 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3TO-220-3
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V1 kV1 kV
Id Continuous Drain Current2 A2 A2 A
Rds On Drain Source Resistance2.3 Ohms7.5 Ohms7 Ohms
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage30 V20 V20 V
Qg Gate Charge4.3 nC--
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation55 W86 W100 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameHiPerFET--
PackagingTubeTubeTube
SeriesX2-ClassIXTP2N100IXTP2N100
BrandIXYSIXYSIXYS
Forward Transconductance Min1.1 S--
Fall Time14 ns27 ns30 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time19 ns29 ns15 ns
Factory Pack Quantity505050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time20 ns80 ns60 ns
Typical Turn On Delay Time15 ns25 ns15 ns
Unit Weight0.012346 oz0.081130 oz0.012346 oz
Number of Channels-1 Channel1 Channel
Height-9.15 mm9.15 mm
Length-10.66 mm10.66 mm
Transistor Type-1 N-Channel1 N-Channel
Width-4.83 mm4.82 mm
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTP2N65X2 MOSFET DISCMSFT NCHULTRAJNCTX2CLASS
IXTP2N100P MOSFET 2 Amps 1000V 7.5 Rds
IXTP2N80 MOSFET 2 Amps 800V 6.2 Rds
IXTP2N100 MOSFET 2 Amps 1000V 7 Rds
IXTP2N100A Neu und Original
IXTP2N100TC Neu und Original
IXTP2N65X2 MOSFET N-CH 650V 2A X2 TO-220
IXTP2N95A Neu und Original
IXTP2N100 MOSFET 2 Amps 1000V 7 Rds
IXTP2N80 MOSFET 2 Amps 800V 6.2 Rds
IXTP2N100P IGBT Transistors MOSFET 2 Amps 1000V 7.5 Rds
IXTP2N60P IGBT Transistors MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
IXTP2N80P MOSFET 2 Amps 800V 6 Rds
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