PartNumber | IXTP2N65X2 | IXTP2N100P | IXTP2N100 |
Description | MOSFET DISCMSFT NCHULTRAJNCTX2CLASS | MOSFET 2 Amps 1000V 7.5 Rds | MOSFET 2 Amps 1000V 7 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 1 kV | 1 kV |
Id Continuous Drain Current | 2 A | 2 A | 2 A |
Rds On Drain Source Resistance | 2.3 Ohms | 7.5 Ohms | 7 Ohms |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Qg Gate Charge | 4.3 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 55 W | 86 W | 100 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Tradename | HiPerFET | - | - |
Packaging | Tube | Tube | Tube |
Series | X2-Class | IXTP2N100 | IXTP2N100 |
Brand | IXYS | IXYS | IXYS |
Forward Transconductance Min | 1.1 S | - | - |
Fall Time | 14 ns | 27 ns | 30 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 19 ns | 29 ns | 15 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 80 ns | 60 ns |
Typical Turn On Delay Time | 15 ns | 25 ns | 15 ns |
Unit Weight | 0.012346 oz | 0.081130 oz | 0.012346 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Height | - | 9.15 mm | 9.15 mm |
Length | - | 10.66 mm | 10.66 mm |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Width | - | 4.83 mm | 4.82 mm |