PartNumber | IXTQ102N25T | IXTQ102N15T | IXTQ102N20T |
Description | MOSFET 102 Amps 250V 29 Rds | MOSFET 102 Amps 150V 18 Rds | MOSFET N-CH 200V 102A TO3P |
Manufacturer | IXYS | IXYS | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-3P-3 | TO-3P-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 250 V | 150 V | - |
Id Continuous Drain Current | 102 A | 102 A | - |
Rds On Drain Source Resistance | 29 Ohms | 18 mOhms | - |
Configuration | Single | Single | - |
Packaging | Tube | Bulk | - |
Series | IXTQ102N25 | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | IXYS | IXYS | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.194007 oz | 0.194007 oz | - |
Vgs Gate Source Voltage | - | 20 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 455 W | - |
Channel Mode | - | Enhancement | - |
Tradename | - | HiPerFET | - |
Length | - | 15.8 mm | - |
Width | - | 4.9 mm | - |
Fall Time | - | 22 ns | - |
Rise Time | - | 14 ns | - |
Typical Turn Off Delay Time | - | 25 ns | - |
Typical Turn On Delay Time | - | 20 ns | - |