IXTQ11

IXTQ110N10P vs IXTQ11N10P vs IXTQ110N055P

 
PartNumberIXTQ110N10PIXTQ11N10PIXTQ110N055P
DescriptionMOSFET 110 Amps 100V 0.015 RdsMOSFET N-CH 55V 110A TO-3P
ManufacturerIXYS-IXYS
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-3P-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current110 A--
Rds On Drain Source Resistance15 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge110 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation480 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenamePolarHT-PolarHT
PackagingTube-Tube
Height20.3 mm--
Length15.8 mm--
SeriesIXTQ110N10-IXTQ110N055
Transistor Type1 N-Channel-1 N-Channel
TypePolarHT Power MOSFET--
Width4.9 mm--
BrandIXYS--
Forward Transconductance Min30 S--
Fall Time25 ns-45 ns
Product TypeMOSFET--
Rise Time25 ns-53 ns
Factory Pack Quantity30--
SubcategoryMOSFETs--
Typical Turn Off Delay Time65 ns-66 ns
Typical Turn On Delay Time21 ns-27 ns
Unit Weight0.194007 oz-0.194007 oz
Package Case--TO-3P-3
Pd Power Dissipation--390 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--110 A
Vds Drain Source Breakdown Voltage--55 V
Vgs th Gate Source Threshold Voltage--5.5 V
Rds On Drain Source Resistance--11 mOhms
Qg Gate Charge--76 nC
Forward Transconductance Min--23 S
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTQ110N10P MOSFET 110 Amps 100V 0.015 Rds
IXTQ11N10P Neu und Original
IXTQ110N10P IGBT Transistors MOSFET 110 Amps 100V 0.015 Rds
IXTQ110N055P MOSFET N-CH 55V 110A TO-3P
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