IXTQ36

IXTQ36N50P vs IXTQ36N30P vs IXTQ36N20T

 
PartNumberIXTQ36N50PIXTQ36N30PIXTQ36N20T
DescriptionMOSFET 36.0 Amps 500 V 0.17 Ohm RdsMOSFET 36 Amps 300V 0.11 RdsMOSFET 36 Amps 200V 60 Rds
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-3P-3TO-3P-3TO-3P-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V300 V200 V
Id Continuous Drain Current36 A36 A36 A
Rds On Drain Source Resistance170 mOhms110 mOhms60 Ohms
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge85 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation540 W300 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancement-
TradenamePolarHV--
PackagingTubeTubeTube
Height20.3 mm20.3 mm-
Length15.8 mm15.8 mm-
SeriesIXTQ36N50IXTQ36N30IXTQ36N20
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypePolarHV Power MOSFET--
Width4.9 mm4.9 mm-
BrandIXYSIXYSIXYS
Forward Transconductance Min23 S--
Fall Time21 ns28 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time27 ns30 ns-
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time75 ns97 ns-
Typical Turn On Delay Time25 ns24 ns-
Unit Weight0.194007 oz0.194007 oz0.194007 oz
Hersteller Teil # Beschreibung RFQ
Littelfuse
Littelfuse
IXTQ36N50P MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
IXTQ36P15P MOSFET -36.0 Amps -150V 0.110 Rds
IXTQ36N30P MOSFET 36 Amps 300V 0.11 Rds
IXTQ36N20T MOSFET 36 Amps 200V 60 Rds
IXTQ36N50 Neu und Original
IXTQ36N50P TO247 Neu und Original
IXTQ36N50P Darlington Transistors MOSFET 36.0 Amps 500 V 0.17 Ohm Rds
IXTQ36N30P Darlington Transistors MOSFET 36 Amps 300V 0.11 Rds
IXTQ36P15P MOSFET -36.0 Amps -150V 0.110 Rds
IXTQ36N20T MOSFET 36 Amps 200V 60 Rds
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