IXTQ50 stock, IXTQ50, IXTQ50N20P


PartNumber	IXTQ50N20P	IXTQ50N25T	IXTQ50N20PM
Description	MOSFET 50 Amps 200V 0.06 Rds	MOSFET 50Amps 250V
Manufacturer	IXYS	IXYS	-
Product Category	MOSFET	MOSFET	-
RoHS	Y	Y	-
Technology	Si	Si	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-3P-3	TO-3P-3	-
Number of Channels	1 Channel	1 Channel	-
Transistor Polarity	N-Channel	N-Channel	-
Vds Drain Source Breakdown Voltage	200 V	250 V	-
Id Continuous Drain Current	50 A	50 A	-
Rds On Drain Source Resistance	60 mOhms	60 mOhms	-
Vgs th Gate Source Threshold Voltage	5 V	5 V	-
Vgs Gate Source Voltage	20 V	30 V	-
Qg Gate Charge	70 nC	78 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 175 C	+ 150 C	-
Pd Power Dissipation	360 W	400 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Tradename	PolarHT	HiPerFET	-
Packaging	Tube	Tube	-
Height	20.3 mm	20.3 mm	-
Length	15.8 mm	15.8 mm	-
Series	IXTQ50N20	IXTQ50N25	-
Transistor Type	1 N-Channel	1 N-Channel	-
Type	PolarHT Power MOSFET	Trench Gate Power MOSFET	-
Width	4.9 mm	4.9 mm	-
Brand	IXYS	IXYS	-
Forward Transconductance Min	12 S	35 S	-
Fall Time	30 ns	25 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	35 ns	25 ns	-
Factory Pack Quantity	30	30	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	70 ns	47 ns	-
Typical Turn On Delay Time	26 ns	14 ns	-
Unit Weight	0.194007 oz	0.056438 oz	-

Search Part Number : "IXTQ50", Match & Start with "IXTQ50" - Total : 6

Hersteller	Teil #	Beschreibung
Littelfuse	IXTQ50N20P	MOSFET 50 Amps 200V 0.06 Rds
Littelfuse	IXTQ50N25T	MOSFET 50Amps 250V
	IXTQ50N20PM	Neu und Original
	IXTQ50N25T1000	Neu und Original
	IXTQ50N25T	IGBT Transistors MOSFET 50Amps 250V
	IXTQ50N20P	IGBT Transistors MOSFET 50 Amps 200V 0.06 Rds

IXTQ50