PartNumber | IXTY1R4N120PHV | IXTY1R4N120P-TRL | IXTY1R4N100P |
Description | Discrete Semiconductor Modules Disc Mosfet N-CH Std-Polar TO-252D | Discrete Semiconductor Modules Polar Power MOSFET | MOSFET 1.4 Amps 1000V 11 Rds |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
RoHS | Y | Y | Y |
Product | Power MOSFET Modules | Power MOSFET Modules | - |
Type | Polar | Polar | - |
Vgs Gate Source Voltage | 30 V | 30 V | 20 V |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Packaging | Reel | Reel | Tube |
Configuration | Single | Single | Single |
Brand | IXYS | IXYS | IXYS |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Fall Time | 29 ns | 29 ns | 28 ns |
Id Continuous Drain Current | 1.4 A | 1.4 A | 1.4 A |
Pd Power Dissipation | 86 W | 86 W | 63 W |
Product Type | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFET |
Rds On Drain Source Resistance | 13 Ohms | 13 Ohms | 11 Ohms |
Rise Time | 27 ns | 27 ns | 35 ns |
Factory Pack Quantity | 2500 | 2500 | 70 |
Subcategory | Discrete Semiconductor Modules | Discrete Semiconductor Modules | MOSFETs |
Tradename | Polar | Polar | - |
Typical Turn Off Delay Time | 78 ns | 78 ns | 65 ns |
Typical Turn On Delay Time | 25 ns | 25 ns | 25 ns |
Vds Drain Source Breakdown Voltage | 1200 V | 1200 V | 1 kV |
Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V | - |
Technology | - | - | Si |
Number of Channels | - | - | 1 Channel |
Channel Mode | - | - | Enhancement |
Height | - | - | 2.38 mm |
Length | - | - | 6.73 mm |
Series | - | - | IXTY1R4N100 |
Transistor Type | - | - | 1 N-Channel |
Width | - | - | 6.22 mm |
Unit Weight | - | - | 0.012346 oz |