IXTY1R4N100P

IXTY1R4N100P
Mfr. #:
IXTY1R4N100P
Hersteller:
Littelfuse
Beschreibung:
MOSFET 1.4 Amps 1000V 11 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTY1R4N100P Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTY1R4N100P DatasheetIXTY1R4N100P Datasheet (P4-P5)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-252-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1 kV
Id - Kontinuierlicher Drainstrom:
1.4 A
Rds On - Drain-Source-Widerstand:
11 Ohms
Vgs - Gate-Source-Spannung:
20 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
63 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Höhe:
2.38 mm
Länge:
6.73 mm
Serie:
IXTY1R4N100
Transistortyp:
1 N-Channel
Breite:
6.22 mm
Marke:
IXYS
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
35 ns
Werkspackungsmenge:
70
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
65 ns
Typische Einschaltverzögerungszeit:
25 ns
Gewichtseinheit:
0.012346 oz
Tags
IXTY1R4N1, IXTY1R4, IXTY1R, IXTY1, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 1KV 1.4A 3-Pin(2+Tab) TO-252
***trelec
MOSFET [Ixys] IXTY1R4N100P MOSFET
*** Electronics
MOSFET N-CH 1000V 1.4A TO-252
***icroelectronics
N-channel 1050 V, 6 Ohm typ., 1.5 A MDmesh K5 Power MOSFET in DPAK package
***r Electronics
Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***el Electronic
FPGA Cyclone® III Family 15408 Cells 437.5MHz 65nm Technology 1.2V Automotive 256-Pin UFBGA
***nell
MOSFET, N-CH, 1.05KV, 1.5A, 60W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 1.05kV; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
Single N-Channel 800 V 4.5 Ohm 4 nC CoolMOS™ Power Mosfet - DPAK
***et
Transistor MOSFET N-Channel 800V 1.5A 3-Pin TO-252 T/R
***nell
MOSFET, N-CH, 800V, 1.5A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 13W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
***emi
N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:1.7A; On Resistance, Rds(on):7.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
Single N-Channel 800 V 1.4 Ohm 10 nC CoolMOS™ Power Mosfet - DPAK
***et
Transistor MOSFET N-Channel 800V 4A 3-Pin DPAK T/R
***nell
MOSFET, N-CH, 800V, 4A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
***ure Electronics
N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK
***ark
MOSFET, N-CH, 800V, 5.7A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 800V, 5.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.7A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK
*** Source Electronics
MOSFET N-CH 800V 6A DPAK / isc N-Channel MOSFET Transistor
***nell
MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.71ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Pow
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Teil # Mfg. Beschreibung Aktie Preis
IXTY1R4N100P
DISTI # IXTY1R4N100P-ND
IXYS CorporationMOSFET N-CH 1000V 1.4A TO-252
RoHS: Compliant
Min Qty: 70
Container: Tube
Temporarily Out of Stock
  • 70:$2.0626
IXTY1R4N100P
DISTI # 747-IXTY1R4N100P
IXYS CorporationMOSFET 1.4 Amps 1000V 11 Rds
RoHS: Compliant
36
  • 1:$2.6700
  • 10:$2.4200
  • 25:$2.1000
  • 50:$1.9700
  • 100:$1.9400
  • 250:$1.5800
  • 500:$1.5100
  • 1000:$1.2500
  • 2500:$1.0500
Bild Teil # Beschreibung
LM193DR

Mfr.#: LM193DR

OMO.#: OMO-LM193DR

Analog Comparators Dual Diff GP
FGD5T120SH

Mfr.#: FGD5T120SH

OMO.#: OMO-FGD5T120SH

IGBT Transistors 1200V 5A Field Stop Trench IGBT
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A

IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
FQD2N100TM

Mfr.#: FQD2N100TM

OMO.#: OMO-FQD2N100TM

MOSFET 1000V N-Channel QFET
ATL431BQDBZR

Mfr.#: ATL431BQDBZR

OMO.#: OMO-ATL431BQDBZR

Voltage References voltage regulator
STD2NK100Z

Mfr.#: STD2NK100Z

OMO.#: OMO-STD2NK100Z

MOSFET N-Channel 1000V Zener SuperMESH
MBRA340T3G

Mfr.#: MBRA340T3G

OMO.#: OMO-MBRA340T3G

Schottky Diodes & Rectifiers 3A 40V
UC1845AMDREP

Mfr.#: UC1845AMDREP

OMO.#: OMO-UC1845AMDREP

Switching Controllers V62/03625-04YE -Current-Mode PWM Con
1734261-5

Mfr.#: 1734261-5

OMO.#: OMO-1734261-5

Headers & Wire Housings 5 POS HDR R/A SMT
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A-ON-SEMICONDUCTOR

IGBT 1200V 5.3A 60W TO252AA
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von IXTY1R4N100P dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,67 $
2,67 $
10
2,42 $
24,20 $
25
2,10 $
52,50 $
50
1,97 $
98,50 $
100
1,94 $
194,00 $
250
1,58 $
395,00 $
500
1,51 $
755,00 $
1000
1,25 $
1 250,00 $
2500
1,05 $
2 625,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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