PartNumber | IXXX200N65B4 | IXXX200N60C3 | IXXX200N60B3 |
Description | IGBT Transistors 650V/370A Trench IGBT GenX4 XPT | IGBT Transistors DISC IGBT XPT-GENX3 | IGBT Transistors DISC IGBT XPT-GENX3 |
Manufacturer | IXYS | IXYS | IXYS |
Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Package / Case | PLUS247-3 | PLUS-247-3 | PLUS-247-3 |
Mounting Style | Through Hole | Through Hole | Through Hole |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 650 V | 600 V | 600 V |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Continuous Collector Current at 25 C | 370 A | 340 A | 380 A |
Pd Power Dissipation | 1150 W | 1.63 kW | 1.63 kW |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Series | IXXX200N65 | - | - |
Packaging | Tube | - | - |
Continuous Collector Current Ic Max | 200 A | 900 A | 900 A |
Brand | IXYS | IXYS | IXYS |
Gate Emitter Leakage Current | 200 nA | 200 nA | 200 nA |
Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | IGBTs | IGBTs | IGBTs |
Tradename | XPT | - | - |
Unit Weight | 0.232808 oz | - | - |
Collector Emitter Saturation Voltage | - | 1.6 V | 1.4 V |