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IXXX200N65B4

IXXX200N65B4
Mfr. #:
IXXX200N65B4
Hersteller:
Littelfuse
Beschreibung:
IGBT Transistors 650V/370A Trench IGBT GenX4 XPT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXXX200N65B4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXXX200N65B4 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
IXYS
Produktkategorie
IGBTs - Single
Serie
GenX4, XPT
Verpackung
Rohr
Montageart
Durchgangsloch
Handelsname
XPT
Paket-Koffer
TO-247-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
PLUS247-3
Aufbau
Single
Leistung max
1150W
Reverse-Recovery-Time-trr
-
Strom-Kollektor-Ic-Max
370A
Spannungs-Kollektor-Emitter-Breakdown-Max
650V
IGBT-Typ
PT
Strom-Kollektor-gepulster-Icm
1000A
Vce-on-Max-Vge-Ic
1.7V @ 15V, 160A
Schaltenergie
4.4mJ (on), 2.2mJ (off)
Gate-Gebühr
553nC
Td-ein-aus-25°C
62ns/245ns
Testbedingung
400V, 100A, 1 Ohm, 15V
Pd-Verlustleistung
1150 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
650 V
Kontinuierlicher Kollektorstrom-bei-25-C
370 A
Gate-Emitter-Leckstrom
200 nA
Maximale Gate-Emitter-Spannung
20 V
Kontinuierlicher Kollektor-Strom-Ic-Max
200 A
Tags
IXXX2, IXXX, IXX
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IXXX200N65B4
DISTI # IXXX200N65B4-ND		IXYS CorporationIGBT 650V 370A 1150W PLUS247
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 270:$13.0688
  • 120:$14.3336
  • 30:$15.5983
  • 10:$16.8630
  • 1:$18.5500
IXXX200N65B4
DISTI # 747-IXXX200N65B4		IXYS CorporationIGBT Transistors 650V/370A Trench IGBT GenX4 XPT
RoHS: Compliant		85
  • 1:$17.6600
  • 10:$16.0600
  • 25:$14.8600
  • 50:$14.0000
  • 100:$13.6500
  • 250:$12.4500
  • 500:$11.6400
Bild Teil # Beschreibung
IXXX200N65B4

Mfr.#: IXXX200N65B4

OMO.#: OMO-IXXX200N65B4

 IGBT Transistors 650V/370A Trench IGBT GenX4 XPT
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OMO.#: OMO-IXXX200N60C3

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IXXX200N60B3

Mfr.#: IXXX200N60B3

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Mfr.#: IXXX200N60B3

OMO.#: OMO-IXXX200N60B3-IXYS-CORPORATION

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IXXX200N60C3

Mfr.#: IXXX200N60C3

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 IGBT 600V 200A PLUS247
IXXX200N65B4

Mfr.#: IXXX200N65B4

OMO.#: OMO-IXXX200N65B4-IXYS-CORPORATION

 IGBT Transistors 650V/370A Trench IGBT GenX4 XPT
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
3500
Menge eingeben:
Der aktuelle Preis von IXXX200N65B4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
17,46 $
17,46 $
10
16,59 $
165,87 $
100
15,71 $
1 571,40 $
500
14,84 $
7 420,50 $
1000
13,97 $
13 968,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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