| PartNumber | KSB596OTU | KSB596O | KSB596Y |
| Description | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Sil | Bipolar Transistors - BJT PNP Epitaxial Sil |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Transistor Polarity | PNP | PNP | PNP |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | - 80 V | - 80 V | - 80 V |
| Collector Base Voltage VCBO | - 80 V | - 80 V | - 80 V |
| Emitter Base Voltage VEBO | - 5 V | - 5 V | - 5 V |
| Collector Emitter Saturation Voltage | - 1 V | - 1 V | - 1 V |
| Maximum DC Collector Current | 4 A | 4 A | 4 A |
| Gain Bandwidth Product fT | 3 MHz | 3 MHz | 3 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| DC Current Gain hFE Max | 240 | 240 | 240 |
| Height | 9.4 mm (Max) | 9.4 mm (Max) | 9.4 mm (Max) |
| Length | 10.1 mm (Max) | 10.1 mm (Max) | 10.1 mm (Max) |
| Packaging | Tube | Bulk | Bulk |
| Width | 4.7 mm (Max) | 4.7 mm (Max) | 4.7 mm (Max) |
| Brand | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
| Continuous Collector Current | - 4 A | - 4 A | - 4 A |
| DC Collector/Base Gain hfe Min | 40 | 40 | 40 |
| Pd Power Dissipation | 30 W | 30 W | 30 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 50 | 200 | 200 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.080072 oz | 0.080072 oz | 0.063493 oz |
| Series | - | - | KSB596 |