KSB811 stock, KSB811, KSB811GTA


PartNumber	KSB811GTA	KSB811OBU	KSB811GBU
Description	Bipolar Transistors - BJT PNP Epitaxial Transistor	Bipolar Transistors - BJT PNP Epitaxial Sil	TRANS PNP 25V 1A TO-92S
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	T	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-92-3	TO-92-3	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	- 25 V	- 25 V	-
Collector Base Voltage VCBO	- 30 V	- 30 V	-
Emitter Base Voltage VEBO	- 5 V	- 5 V	-
Maximum DC Collector Current	1 A	1 A	-
Gain Bandwidth Product fT	110 MHz	110 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
DC Current Gain hFE Max	400	400	-
Height	3.7 mm	3.7 mm	-
Length	4 mm	4 mm	-
Packaging	Ammo Pack	Bulk	-
Width	2.31 mm	2.31 mm	-
Brand	ON Semiconductor / Fairchild	ON Semiconductor / Fairchild	-
Continuous Collector Current	- 1 A	- 1 A	-
DC Collector/Base Gain hfe Min	70	70	-
Pd Power Dissipation	350 mW	350 mW	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	3000	1000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.008466 oz	0.008466 oz	-

Search Part Number : "KSB811", Match & Start with "KSB811" - Total : 13

Hersteller	Teil #	Beschreibung
ON Semiconductor / Fairchild	KSB811GTA	Bipolar Transistors - BJT PNP Epitaxial Transistor
ON Semiconductor / Fairchild	KSB811OBU	Bipolar Transistors - BJT PNP Epitaxial Sil
ON Semiconductor	KSB811GBU	TRANS PNP 25V 1A TO-92S
	KSB811GTA	TRANS PNP 25V 1A TO-92S
	KSB811OBU	TRANS PNP 25V 1A TO-92S
	KSB811OTA	TRANS PNP 25V 1A TO-92S
	KSB811YBU	TRANS PNP 25V 1A TO-92S
	KSB811YTA	TRANS PNP 25V 1A TO-92S
	KSB811	Neu und Original
	KSB811-G	Neu und Original
	KSB811-GTA	Neu und Original
	KSB811-YC	Neu und Original
	KSB811CYTA	Neu und Original

KSB811