PartNumber | MJB44H11T4G | MJB44H11T4-A | MJB44H11T4 |
Description | Bipolar Transistors - BJT 8A 80V 50W NPN | Bipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistor | Bipolar Transistors - BJT 8A 80V 50W NPN |
Manufacturer | ON Semiconductor | STMicroelectronics | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - Pre-Biased | Bipolar Transistors - BJT |
RoHS | Y | Y | N |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-3 | D2PAK-3 | TO-263-3 |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 80 V | - | 80 V |
Collector Base Voltage VCBO | 5 V | - | 5 V |
Emitter Base Voltage VEBO | 5 V | - | 5 V |
Collector Emitter Saturation Voltage | 1 V | - | 1 V |
Maximum DC Collector Current | 10 A | - | 10 A |
Gain Bandwidth Product fT | 50 MHz | - | 50 MHz |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Series | MJB44H11 | MJB44H11T4-A | - |
Height | 4.83 mm | - | 4.83 mm (Max) |
Length | 10.29 mm | - | 10.29 mm (Max) |
Packaging | Reel | Reel | Reel |
Width | 9.65 mm | - | 9.65 mm (Max) |
Brand | ON Semiconductor | STMicroelectronics | ON Semiconductor |
Continuous Collector Current | 10 A | - | 10 A |
DC Collector/Base Gain hfe Min | 60 | - | 60 |
Pd Power Dissipation | 50 W | - | 50 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors |
Factory Pack Quantity | 800 | 1000 | 800 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.050054 oz | 0.079014 oz | - |
Qualification | - | AEC-Q101 | - |