MJB44H11T4

MJB44H11T4G vs MJB44H11T4-A vs MJB44H11T4

 
PartNumberMJB44H11T4GMJB44H11T4-AMJB44H11T4
DescriptionBipolar Transistors - BJT 8A 80V 50W NPNBipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistorBipolar Transistors - BJT 8A 80V 50W NPN
ManufacturerON SemiconductorSTMicroelectronicsON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - Pre-BiasedBipolar Transistors - BJT
RoHSYYN
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3D2PAK-3TO-263-3
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max80 V-80 V
Collector Base Voltage VCBO5 V-5 V
Emitter Base Voltage VEBO5 V-5 V
Collector Emitter Saturation Voltage1 V-1 V
Maximum DC Collector Current10 A-10 A
Gain Bandwidth Product fT50 MHz-50 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesMJB44H11MJB44H11T4-A-
Height4.83 mm-4.83 mm (Max)
Length10.29 mm-10.29 mm (Max)
PackagingReelReelReel
Width9.65 mm-9.65 mm (Max)
BrandON SemiconductorSTMicroelectronicsON Semiconductor
Continuous Collector Current10 A-10 A
DC Collector/Base Gain hfe Min60-60
Pd Power Dissipation50 W-50 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors
Factory Pack Quantity8001000800
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.050054 oz0.079014 oz-
Qualification-AEC-Q101-
Hersteller Teil # Beschreibung RFQ
MJB44H11T4G Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11T4G B44H11G Neu und Original
STMicroelectronics
STMicroelectronics
MJB44H11T4-A Bipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistor
MJB44H11T4-A TRANS NPN 80V 10A D2PAK-3
MJB44H11T4 Bipolar Transistors - Pre-Biased 80V Low Voltage NPN 5V VEBO 10A IC 50W
ON Semiconductor
ON Semiconductor
MJB44H11T4 Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11T4G Bipolar Transistors - BJT 8A 80V 50W NPN
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