MJD18

MJD18002D2T4G vs MJD18002D2 vs MJD18002D2T4

 
PartNumberMJD18002D2T4GMJD18002D2MJD18002D2T4
DescriptionBipolar Transistors - BJT BIP NPN 2A 450V TR F
ManufacturerON Semiconductor-ON
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max450 V--
Collector Base Voltage VCBO1 kV--
Emitter Base Voltage VEBO11 V--
Maximum DC Collector Current2 A--
Gain Bandwidth Product fT13 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height2.38 mm (Max)--
Length6.73 mm (Max)--
PackagingReel--
Width6.22 mm (Max)--
BrandON Semiconductor--
DC Collector/Base Gain hfe Min14--
Pd Power Dissipation50000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MJD18002D2T4G Bipolar Transistors - BJT BIP NPN 2A 450V TR F
MJD18002D2T4G TRANS NPN 450V 2A DPAK
MJD18002D2 Neu und Original
MJD18002D2T4 Neu und Original
Top