MJE13003G

MJE13003G vs MJE13003G-B vs MJE13003G-H-C

 
PartNumberMJE13003GMJE13003G-BMJE13003G-H-C
DescriptionBipolar Transistors - BJT BIP NPN 2A 400V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-225-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO100 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current1.5 A--
Gain Bandwidth Product fT3 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Height11.04 mm--
Length7.74 mm--
Width2.66 mm--
BrandON Semiconductor--
Continuous Collector Current1.5 A--
DC Collector/Base Gain hfe Min8--
Pd Power Dissipation1.4 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity500--
SubcategoryTransistors--
Unit Weight0.068784 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MJE13003G Bipolar Transistors - BJT BIP NPN 2A 400V
MJE13003G TRANS NPN 400V 1.5A TO-225
MJE13003G-B Neu und Original
MJE13003G-H-C Neu und Original
MJE13003G.. Neu und Original
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