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MJE52

MJE520 vs MJE521 vs MJE521G

 
PartNumberMJE520MJE521MJE521G
DescriptionBipolar Transistors - BJT 30Vcbo 30Vceo 4.0Vebo 3.0A 25WBipolar Transistors - BJT 40Vcbo 40Vceo 4.0Vebo 4.0A 40WBipolar Transistors - BJT 4A 40V 40W NPN
ManufacturerCentral SemiconductorCentral SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
TechnologySiSi-
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-126-3TO-126-3TO-225-3
Transistor PolarityNPNNPNNPN
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max30 V40 V40 V
Collector Base Voltage VCBO30 V40 V40 V
Emitter Base Voltage VEBO4 V4 V4 V
Maximum DC Collector Current7 A8 A4 A
Minimum Operating Temperature- 65 C- 65 C- 65 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesMJE520MJE521-
PackagingBulkBulkBulk
BrandCentral SemiconductorCentral SemiconductorON Semiconductor
Continuous Collector Current3 A4 A4 A
DC Collector/Base Gain hfe Min25 at 1 A, 1 V40 at 1 A, 1 V40
Pd Power Dissipation25 W40 W40 W
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity10001000500
SubcategoryTransistorsTransistorsTransistors
Part # AliasesMJE520 PBFREEMJE521 PBFREE-
Height--11.04 mm (Max)
Length--7.74 mm (Max)
Width--2.66 mm (Max)
Unit Weight--0.068784 oz
Hersteller Teil # Beschreibung RFQ
Central Semiconductor
Central Semiconductor 		MJE520 Bipolar Transistors - BJT 30Vcbo 30Vceo 4.0Vebo 3.0A 25W
MJE521 Bipolar Transistors - BJT 40Vcbo 40Vceo 4.0Vebo 4.0A 40W
ON Semiconductor
ON Semiconductor 		MJE521G Bipolar Transistors - BJT 4A 40V 40W NPN
MJE521G TRANS NPN 40V 4A TO225AA
MJE520 Bipolar Power Transistor NPN Amplifier/Switch 3A 30V 3-Pin TO-126 Through Hole Box - Boxed Product (Development Kits) (Alt: MJE520)
MJE520K Neu und Original
STMicroelectronics
STMicroelectronics 		MJE521 TRANS NPN 40V 4A TO225AA
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