| PartNumber | MMDT5401-7-F | MMDT5401Q-7-F | MMDT5451-7 |
| Description | Bipolar Transistors - BJT -150V 200mW | Bipolar Transistors - BJT SS Hi Voltage Transistor | Bipolar Transistors - BJT 160 / 160V 200mW |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | - | N |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-363-6 | SOT-223-3 | SOT-363-6 |
| Transistor Polarity | PNP | PNP | NPN, PNP |
| Configuration | Dual | Single | Dual |
| Collector Emitter Voltage VCEO Max | - 150 V | - 150 V | 150 V, 160 V |
| Collector Base Voltage VCBO | - 160 V | - 160 V | 160 V, 180 V |
| Emitter Base Voltage VEBO | - 5 V | - 6 V | - 5 V |
| Collector Emitter Saturation Voltage | - 0.5 V | - 0.5 V | 0.2 V |
| Maximum DC Collector Current | 0.2 A | - | 0.2 A |
| Gain Bandwidth Product fT | 300 MHz | 150 MHz | 300 MHz |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Series | MMDT54 | - | MMDT5451 |
| DC Current Gain hFE Max | 240 | 900 | 240 |
| Height | 1 mm | - | 1 mm |
| Length | 2.2 mm | - | 2.2 mm |
| Packaging | Reel | - | - |
| Width | 1.35 mm | - | 1.35 mm |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Continuous Collector Current | - 0.2 A | - 200 mA | - 0.2 A |
| DC Collector/Base Gain hfe Min | 60 | - | 60 |
| Pd Power Dissipation | 200 mW | 3 W | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000212 oz | - | 0.000212 oz |
| Technology | - | Si | - |
| Qualification | - | AEC-Q101 | - |