MPS6601 stock, MPS6601, MPS6601


PartNumber	MPS6601	MPS6601RLRA	MPS6601G
Description	Bipolar Transistors - BJT	Bipolar Transistors - BJT 1A 25V NPN	Bipolar Transistors - BJT 1A 25V NPN
Manufacturer	Diodes Incorporated	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	Bipolar Transistors - BJT
RoHS	N	N	Y
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	TO-92-3	TO-92-3	TO-92-3
Transistor Polarity	NPN	NPN	NPN
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	25 V	25 V	25 V
Collector Base Voltage VCBO	25 V	25 V	25 V
Emitter Base Voltage VEBO	4 V	4 V	4 V
Collector Emitter Saturation Voltage	0.6 V	0.6 V	0.6 V
Maximum DC Collector Current	1 A	1 A	1 A
Gain Bandwidth Product fT	100 MHz	100 MHz	100 MHz
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Series	MPS6601	-	-
DC Current Gain hFE Max	50 at 100 mA, 1 V	-	-
Height	4.01 mm	5.33 mm (Max)	5.33 mm (Max)
Length	4.77 mm	5.2 mm (Max)	5.2 mm (Max)
Width	2.41 mm	4.19 mm (Max)	4.19 mm (Max)
Brand	Diodes Incorporated	ON Semiconductor	ON Semiconductor
Continuous Collector Current	0.5 A	0.5 A	0.5 A
Pd Power Dissipation	1 W	1 W	1 W
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors
Subcategory	Transistors	Transistors	Transistors
Unit Weight	0.016000 oz	-	-
Packaging	-	Reel	Bulk
DC Collector/Base Gain hfe Min	-	50	50
Factory Pack Quantity	-	2000	5000

Search Part Number : "MPS6601", Match & Start with "MPS6601" - Total : 8

Hersteller	Teil #	Beschreibung
Diodes Incorporated	MPS6601	Bipolar Transistors - BJT
ON Semiconductor	MPS6601RLRA	Bipolar Transistors - BJT 1A 25V NPN
	MPS6601G	Bipolar Transistors - BJT 1A 25V NPN
	MPS6601	TRANS NPN 25V 1A TO92
	MPS6601G	TRANS NPN 25V 1A TO92
	MPS6601RLRA	TRANS NPN 25V 1A TO-92
	MPS6601RLRAG	TRANS NPN 25V 1A TO-92
	MPS6601RLRM	Neu und Original

MPS6601