PartNumber | NDD02N40T4G | NDD02N40-1G | NDD02N60Z-1G |
Description | MOSFET NFET DPAK 400V 1.7A 5.5OH | MOSFET NFET DPAK 400V 1.7A 5.5OH | MOSFET N-CH 600V IPAK |
Manufacturer | ON Semiconductor | ON Semiconductor | ON |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | Through Hole |
Package / Case | TO-252-3 | TO-247-3 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 400 V | 400 V | - |
Id Continuous Drain Current | 400 mA | 1.7 A | - |
Rds On Drain Source Resistance | 5.5 Ohms | 4.5 Ohms | - |
Configuration | Single | Single | Single |
Packaging | Reel | Tube | Tube |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | ON Semiconductor | ON Semiconductor | - |
Moisture Sensitive | Yes | Yes | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 75 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs th Gate Source Threshold Voltage | - | 1.6 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 5.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 125 C |
Pd Power Dissipation | - | 39 W | - |
Forward Transconductance Min | - | 1.1 S | - |
Fall Time | - | 4 ns | - |
Rise Time | - | 7 ns | - |
Typical Turn Off Delay Time | - | 14 ns | - |
Typical Turn On Delay Time | - | 5 ns | - |
Package Case | - | - | IPAK-3 |
Pd Power Dissipation | - | - | 57 W |
Vgs Gate Source Voltage | - | - | 30 V |
Id Continuous Drain Current | - | - | 1.4 A |
Vds Drain Source Breakdown Voltage | - | - | 600 V |
Vgs th Gate Source Threshold Voltage | - | - | 4.5 V |
Rds On Drain Source Resistance | - | - | 4 Ohms |
Qg Gate Charge | - | - | 10.1 nC |
Forward Transconductance Min | - | - | 1.7 S |