NDD02

NDD02N40T4G vs NDD02N40-1G vs NDD02N60Z-1G

 
PartNumberNDD02N40T4GNDD02N40-1GNDD02N60Z-1G
DescriptionMOSFET NFET DPAK 400V 1.7A 5.5OHMOSFET NFET DPAK 400V 1.7A 5.5OHMOSFET N-CH 600V IPAK
ManufacturerON SemiconductorON SemiconductorON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTThrough HoleThrough Hole
Package / CaseTO-252-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage400 V400 V-
Id Continuous Drain Current400 mA1.7 A-
Rds On Drain Source Resistance5.5 Ohms4.5 Ohms-
ConfigurationSingleSingleSingle
PackagingReelTubeTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Factory Pack Quantity250075-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Vgs th Gate Source Threshold Voltage-1.6 V-
Vgs Gate Source Voltage-20 V-
Qg Gate Charge-5.5 nC-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 125 C
Pd Power Dissipation-39 W-
Forward Transconductance Min-1.1 S-
Fall Time-4 ns-
Rise Time-7 ns-
Typical Turn Off Delay Time-14 ns-
Typical Turn On Delay Time-5 ns-
Package Case--IPAK-3
Pd Power Dissipation--57 W
Vgs Gate Source Voltage--30 V
Id Continuous Drain Current--1.4 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--4.5 V
Rds On Drain Source Resistance--4 Ohms
Qg Gate Charge--10.1 nC
Forward Transconductance Min--1.7 S
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
NDD02N40T4G MOSFET NFET DPAK 400V 1.7A 5.5OH
NDD02N40-1G MOSFET NFET DPAK 400V 1.7A 5.5OH
NDD02N40-1G MOSFET N-CH 400V 1.7A IPAK
NDD02N40T4G MOSFET N-CH 400V 1.7A DPAK
NDD02N60Z-1G MOSFET N-CH 600V IPAK
NDD02N60ZT4G MOSFET N-CH 600V DPAK
NDD02N40 Neu und Original
NDD02N60 Neu und Original
NDD02N60Z Neu und Original
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