NDD02N60ZT4G

Mfr. #:: NDD02N60ZT4G
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET N-CH 600V DPAK
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: NDD02N60ZT4G Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: NDD02N60ZT4G Datasheet NDD02N60ZT4G Datasheet (P4-P6)NDD02N60ZT4G Datasheet (P7-P9)NDD02N60ZT4G Datasheet (P10)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: AN

Produktkategorie: FETs - Einzeln

Tags: NDD02N60Z, NDD02N6, NDD02, NDD0, NDD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NDD02N60ZT4G Beschreibung

***(Formerly Allied Electronics): NDD02N60ZT4G N-channel MOSFET Transistor; 2.4 A; 600 V; 3-Pin DPAK

***emi: Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK

*** Source Electronics: Trans MOSFET N-CH 600V 2.2A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 600V DPAK

***nell: MOSFET,N CH,W DIODE,600V,2.2A,DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 57W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***(Formerly Allied Electronics): NDD03N60ZT4G N-channel MOSFET Transistor; 3 A; 600 V; 3-Pin DPAK

***emi: Power MOSFET 600V 2.6A 3.6 Ohm Single N-Channel DPAK

***-Wing Technology: Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 2.6A Tc 2.6A 61W 10ns

***ure Electronics: N-Channel 600 V 3.6 Ohm 61 W Surface Mount Power MOSFET - TO-252-3

***nell: MOSFET,N CH,W DIODE,600V,2.6A,DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 61W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C

***emi: N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK

***ure Electronics: N-Channel 600 V 1.9 A 4.7 Ohm Surface Mount Power Mosfet - TO-252-3

***ment14 APAC: MOSFET, N-CH, 600V, 1.9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Source Voltage Vds:600V; On Resistance

*** Stop Electro: Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***emi: N-Channel QFET® MOSFET 600V, 1.9A, 4.7Ω

***nell: MOSFET, N, 600V, 2A; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.9A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 4.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 44W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Current Id Max: 1.9mA; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: 600V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***icroelectronics: N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package

***r Electronics: Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, N CH, 620V, 2.2A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***icroelectronics: N-channel 620 V, 2.5 Ohm, 2.5 A SuperMESH3(TM) Power MOSFET DPAK

***ure Electronics: N-Channel 620 V 3 Ohm Surface Mount SuperMesh III Power MosFet - TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ark: MOSFET, N CH, 620V, 2.5A, TO-252; Transistor Polarity:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.5A; On Resistance Rds(on):2.5ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

***icroelectronics: N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in DPAK package

***ure Electronics: N-Channel 620 V 2.5 Ohm Surface Mount SuperMESH3 Power MosFet - TO-252-3

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ment14 APAC: MOSFET, N CH, 620V, 2.7A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:620V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***ark: MOSFET, N CH, 620V, 2.7A, TO-252, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:45W; Product Range:-RoHS Compliant: Yes

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
NDD02N60ZT4G DISTI # NDD02N60ZT4GOSTR-ND	ON Semiconductor	MOSFET N-CH 600V DPAK RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Limited Supply - Call
NDD02N60ZT4G DISTI # NDD02N60ZT4GOSCT-ND	ON Semiconductor	MOSFET N-CH 600V DPAK RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
NDD02N60ZT4G DISTI # NDD02N60ZT4GOSDKR-ND	ON Semiconductor	MOSFET N-CH 600V DPAK RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
NDD02N60ZT4G DISTI # 70341173	ON Semiconductor	NDD02N60ZT4G N-channel MOSFET Transistor,2.4 A,600 V,3-Pin DPAK RoHS: Compliant	0	50:$0.7030 125:$0.6680 250:$0.6340 500:$0.6030
NDD02N60ZT4G DISTI # 863-NDD02N60ZT4G	ON Semiconductor	MOSFET NFET IPAK 600V 2.2A 4.8R RoHS: Compliant	0
NDD02N60ZT4G	ON Semiconductor		908
NDD02N60ZT4G	ON Semiconductor	N-Channel Power MOSFET 600 V, 4.0	1000	1:$0.4500 100:$0.3400 500:$0.2900 1000:$0.2700

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: NDD02N40T4G OMO.#: OMO-NDD02N40T4G	MOSFET NFET DPAK 400V 1.7A 5.5OH
	Mfr.#: NDD02N40-1G OMO.#: OMO-NDD02N40-1G	MOSFET NFET DPAK 400V 1.7A 5.5OH
	Mfr.#: NDD02N40 OMO.#: OMO-NDD02N40-1190	Neu und Original
	Mfr.#: NDD02N40-1G OMO.#: OMO-NDD02N40-1G-ON-SEMICONDUCTOR	MOSFET N-CH 400V 1.7A IPAK
	Mfr.#: NDD02N40T4G OMO.#: OMO-NDD02N40T4G-ON-SEMICONDUCTOR	MOSFET N-CH 400V 1.7A DPAK
	Mfr.#: NDD02N60 OMO.#: OMO-NDD02N60-1190	Neu und Original
	Mfr.#: NDD02N60Z OMO.#: OMO-NDD02N60Z-1190	Neu und Original
	Mfr.#: NDD02N60Z-1G OMO.#: OMO-NDD02N60Z-1G-ON-SEMICONDUCTOR	MOSFET N-CH 600V IPAK
	Mfr.#: NDD02N60ZT4G OMO.#: OMO-NDD02N60ZT4G-ON-SEMICONDUCTOR	MOSFET N-CH 600V DPAK

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1000
Menge eingeben:

Der aktuelle Preis von NDD02N60ZT4G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,40 $~~; ~~0,40 $~~

10: ~~0,38 $~~; ~~3,85 $~~

100: ~~0,36 $~~; ~~36,45 $~~

500: ~~0,34 $~~; ~~172,15 $~~

1000: ~~0,32 $~~; ~~324,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

NDD02N60Z 3
NDD02N6 4
NDD02 7
NDD0 43
NDD 82

NDD02N60ZT4G

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes