 | |  | |
| PartNumber | NDD02N60 | NDD02N60Z | NDD02N60Z-1G |
| Description | MOSFET N-CH 600V IPAK | ||
| Manufacturer | ON | ON | ON |
| Product Category | FETs - Single | FETs - Single | FETs - Single |
| Packaging | Tube | Tube | Tube |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package Case | IPAK-3 | IPAK-3 | IPAK-3 |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Configuration | Single | Single | Single |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | 57 W | 57 W | 57 W |
| Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 1.4 A | 1.4 A | 1.4 A |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Vgs th Gate Source Threshold Voltage | 4.5 V | 4.5 V | 4.5 V |
| Rds On Drain Source Resistance | 4 Ohms | 4 Ohms | 4 Ohms |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Qg Gate Charge | 10.1 nC | 10.1 nC | 10.1 nC |
| Forward Transconductance Min | 1.7 S | 1.7 S | 1.7 S |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NDD02N60 | Neu und Original | ||
| NDD02N60Z | Neu und Original | ||
ON Semiconductor |
NDD02N60Z-1G | MOSFET N-CH 600V IPAK | |
| NDD02N60ZT4G | MOSFET N-CH 600V DPAK |