NDD04

NDD04N50Z-1G vs NDD04N50ZT4G vs NDD04N60Z-1G

 
PartNumberNDD04N50Z-1GNDD04N50ZT4GNDD04N60Z-1G
DescriptionMOSFET 600V 3A HV MOSFET IPAKMOSFET 500V 3A HV MOSFET DPAKMOSFET N-CH 600V 4A IPAK
ManufacturerON SemiconductorON SemiconductorON
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleSMD/SMTThrough Hole
Package / CaseTO-247-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current3 A3 A-
Rds On Drain Source Resistance2.7 Ohms2.7 Ohms-
Vgs Gate Source Voltage30 V30 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation61 W61 W-
ConfigurationSingleSingleSingle
PackagingTubeReelTube
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandON SemiconductorON Semiconductor-
Product TypeMOSFETMOSFET-
Factory Pack Quantity752500-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--IPAK-3
Pd Power Dissipation--83 W
Id Continuous Drain Current--4.1 A
Vds Drain Source Breakdown Voltage--600 V
Vgs th Gate Source Threshold Voltage--4.5 V
Rds On Drain Source Resistance--1.8 Ohms
Qg Gate Charge--19 nC
Forward Transconductance Min--3.3 S
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
NDD04N50Z-1G MOSFET 600V 3A HV MOSFET IPAK
NDD04N50ZT4G MOSFET 500V 3A HV MOSFET DPAK
NDD04N50Z-1G IGBT Transistors MOSFET 600V 3A HV MOSFET IPAK
NDD04N50ZT4G MOSFET N-CH 500V 3A DPAK
NDD04N60Z-1G MOSFET N-CH 600V 4A IPAK
NDD04N60ZT4G MOSFET N-CH 600V 4.1A DPAK
NDD04N50Z_1G INSTOCK
NDD04N50Z Neu und Original
NDD04N50ZT4G FQD3N56C Neu und Original
NDD04N60Z Neu und Original
NDD04N60Z1G Neu und Original
NDD04N60ZG Neu und Original
NDD04N60ZT4 Neu und Original
NDD04N60ZT4GJIA Neu und Original
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